Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 139 (7) ◽  
pp. 1956-1962 ◽  
Author(s):  
Choon Ho An ◽  
Katsuhisa Sugimoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Dissolution Rates ◽  
Metalorganic Chemical

Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor deposition

1995 ◽  
Vol 146 (1-4) ◽  
pp. 482-488 ◽  
Author(s):  
Moo-Sung Kim ◽  
Yong Kim ◽  
Min-Suk Lee ◽  
Young Ju Park ◽  
Seong-II Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Miller Index ◽  
Gaas Substrates ◽  
Metalorganic Chemical

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

2006 ◽  
Vol 290 (2) ◽  
pp. 441-445 ◽  
Author(s):  
Yong-Chul Jung ◽  
Jeong-Hun Kim ◽  
Sang-Hee Suh ◽  
Byeong-Kwon Ju ◽  
Jin-Sang Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gaas Substrates ◽  
Material Characteristics ◽  
Metalorganic Chemical

scholarly journals (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

AIP Advances ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 055101 ◽  
Author(s):  
V. Fan Arcara ◽  
B. Damilano ◽  
G. Feuillet ◽  
A. Courville ◽  
S. Chenot ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Tunnel Junction ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Contact Layer ◽  
Light Emitting ◽  
Metalorganic Chemical

scholarly journals Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition

2020 ◽  
Vol 117 (8) ◽  
pp. 082102 ◽  
Author(s):  
Tinh Binh Tran ◽  
Che-Hao Liao ◽  
Feras AlQatari ◽  
Xiaohang Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Boron Content ◽  
Chemical Vapor ◽  
Single Phase Wurtzite ◽  
Metalorganic Chemical

Characteristics improvement of metalorganic chemical vapor deposition grown MgZnO films by MgO buffer layers

2009 ◽  
Vol 518 (4) ◽  
pp. 1185-1189 ◽  
Author(s):  
Dong Chan Kim ◽  
Bo Hyun Kong ◽  
Cheol Hyoun Ahn ◽  
Hyung Koun Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Metalorganic Chemical
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