Boron-Doped Si[sub 0.8]Ge[sub 0.2] Thin Film Deposited by Helicon Sputtering for Microthermoelectric Hydrogen Sensor

2007 ◽  
Vol 154 (1) ◽  
pp. J53 ◽  
Author(s):  
Kazuki Tajima ◽  
Woosuck Shin ◽  
Lionel Fabrice Houlet ◽  
Toshio Itoh ◽  
Noriya Izu ◽  
...  
2006 ◽  
Vol 320 ◽  
pp. 99-102 ◽  
Author(s):  
Kazuki Tajima ◽  
Woosuck Shin ◽  
Maiko Nishibori ◽  
Norimitsu Murayama ◽  
Toshio Itoh ◽  
...  

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.


2020 ◽  
Vol 140 (4) ◽  
pp. 92-96
Author(s):  
Yuto Goda ◽  
Hiroto Shobu ◽  
Kenji Sakai ◽  
Toshihiko Kiwa ◽  
Kenji Kondo ◽  
...  

2011 ◽  
Vol 7 (4) ◽  
pp. 249-252 ◽  
Author(s):  
Lu-jun Cui ◽  
Hui-chao Shang ◽  
Gang Zhang ◽  
Ze-xiang Zhao ◽  
Jun Zhou

2016 ◽  
Vol 176 ◽  
pp. 232-236 ◽  
Author(s):  
Kamrul Hassan ◽  
A.S.M. Iftekhar Uddin ◽  
Farman Ullah ◽  
Yong Soo Kim ◽  
Gwiy-Sang Chung

2017 ◽  
Vol 214 (11) ◽  
pp. 1700222 ◽  
Author(s):  
Daria Majchrowicz ◽  
Monika Kosowska ◽  
Przemysław Struk ◽  
Małgorzata Jędrzejewska-Szczerska

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