Low Pressure Chemical Vapor Deposition of In Situ-Doped n- and p-Type Si[sub 1−x]Ge[sub x] Films at 425°C

2007 ◽  
Vol 154 (9) ◽  
pp. H789
Author(s):  
Reinaldo A. Vega ◽  
Tsu-Jae King Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
P Type

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiN x Passivation

2016 ◽  
Vol 63 (10) ◽  
pp. 3887-3892 ◽  
Author(s):  
Tongde Huang ◽  
Olle Axelsson ◽  
Thanh Ngoc Thi Do ◽  
Mattias Thorsell ◽  
Dan Kuylenstierna ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Noise Performance ◽  
Pressure Chemical ◽  
Gan Hemts

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

2010 ◽  
Vol 442 ◽  
pp. 195-201
Author(s):  
F. Iqbal ◽  
A. Ali ◽  
A. Mehmood ◽  
M. Yasin ◽  
A. Raja ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystalline ◽  
Type Silicon ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
P Type

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

Characterization of In Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

1997 ◽  
Vol 144 (11) ◽  
pp. 3952-3958 ◽  
Author(s):  
J. V. Grahn ◽  
J. Pejnefors ◽  
M. Sandén ◽  
S.‐L. Zhang ◽  
M. Östling
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

ChemInform Abstract: The Low Pressure Chemical Vapor Deposition (LPCVD) of in situ Boron-Doped Polysilicon

ChemInform ◽  
1988 ◽  
Vol 19 (43) ◽  
Author(s):  
C. M. MARITAN ◽  
L. P. BERNDT ◽  
N. G. TARR ◽  
J. M. BULLERWELL ◽  
G. M. JENKINS
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Boron Doped ◽  
Pressure Chemical

In situ laser recrystallization of Si layers during low-pressure chemical vapor deposition: Recrystallization dynamics and influence of the seed layer

2002 ◽  
Vol 17 (11) ◽  
pp. 2966-2973 ◽  
Author(s):  
D. Della Sala ◽  
A. Santoni ◽  
L. Fornarini ◽  
J. Lancok ◽  
S. Loreti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Seed Layer ◽  
Film Surface ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Morphological Properties ◽  
Molten Silicon ◽  
Pressure Chemical

The growth of polycrystalline silicon on glass by low-pressure chemical vapor deposition and in situ laser induced recrystallization was investigated with the aim to study the influence of the seed layer and the mechanism of the recrystallization dynamics on the structural and morphological properties of the grown film. A seed layer was used to trigger the solidification process of many additional in situ laser-crystallized overlayers. One-dimensional calculations of the thermal flow produced by laser irradiation were used to clarify the complex interaction between the substrate and the molten silicon surface layer during nucleation and growth. The experiments show the relevant role played by the seed layer and the peculiar shaping of the film surface due to the preferential aggregation of molten silicon. Compact polysilicon films with thicknesses up to 4 μm with almost monocrystalline grains of 1–2-μm size were obtained.

scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

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