Screening of High-k Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

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The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

Materials Chemistry Frontiers ◽

10.1039/d0qm00931h ◽

2021 ◽

Author(s):

Sucheta Sengupta ◽

Rinki Aggarwal ◽

Yuval Golan

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Metal Ion ◽

Chemical Deposition ◽

Review Article ◽

Complexing Agents ◽

Chemical Solution ◽

Solution Deposition ◽

Metal Chalcogenide ◽

Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

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Dependence of microstructure and optical properties on holding time and annealing temperature of BiFeO3thin film fabricated by chemical solution deposition (CSD)

Materials Today Proceedings ◽

10.1016/j.matpr.2020.11.534 ◽

2021 ◽

Author(s):

Elvinda Bendra Agustina ◽

Risa Suryana ◽

Yofentina Iriani

Keyword(s):

Optical Properties ◽

Chemical Solution Deposition ◽

Annealing Temperature ◽

Holding Time ◽

Chemical Solution ◽

Solution Deposition

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An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Journal of Materials Research ◽

10.1557/jmr.1999.0594 ◽

1999 ◽

Vol 14 (11) ◽

pp. 4395-4401 ◽

Cited By ~ 5

Author(s):

Seung-Hyun Kim ◽

D. J. Kim ◽

K. M. Lee ◽

M. Park ◽

A. I. Kingon ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Low Voltage ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Chemical Solution Deposition Method ◽

Low Leakage ◽

Low Leakage Current ◽

Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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