(Invited) High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

ECS Transactions ◽

10.1149/1.3631482 ◽

2019 ◽

Vol 41 (8) ◽

pp. 19-30 ◽

Author(s):

Matthew J. Marinella ◽

Stanley Atcitty ◽

Sandeepan DasGupta ◽

Robert J. Kaplar ◽

Mark A. Smith

Keyword(s):

State Of The Art ◽

Semiconductor Devices ◽

Advanced Materials ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

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Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications

International Journal of Electronics ◽

10.1080/00207210410001662071 ◽

2003 ◽

Vol 90 (11-12) ◽

pp. 667-693 ◽

Author(s):

C. Mark Johnson

Keyword(s):

Power Transmission ◽

State Of The Art ◽

Semiconductor Devices ◽

Future Prospects ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Current State ◽

Transmission And Distribution

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Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion

2009 IEEE Power Electronics and Machines in Wind Applications ◽

10.1109/pemwa.2009.5208365 ◽

2009 ◽

Author(s):

B. Backlund ◽

M. Rahimo ◽

S. Klaka ◽

J. Siefken

Keyword(s):

Wind Energy ◽

Energy Conversion ◽

State Of The Art ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Medium Voltage ◽

Wind Energy Conversion ◽

Power Semiconductor Devices

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The present state of the art in high-power semiconductor devices

Proceedings of the IEEE ◽

10.1109/5.931470 ◽

2001 ◽

Vol 89 (6) ◽

pp. 813-821 ◽

Author(s):

K. Satoh ◽

M. Yamamoto

Keyword(s):

Present State ◽

State Of The Art ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

SSRN Electronic Journal ◽

10.2139/ssrn.3427489 ◽

2019 ◽

Author(s):

Kang Wang ◽

Kun Ruan ◽

Wenbo Hu ◽

Shengli Wu ◽

Hongxing Wang

Keyword(s):

Room Temperature ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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System-In-Package Approach for Ultra-High-Power Semiconductor Devices

2006 International Conference on Electronic Materials and Packaging ◽

10.1109/emap.2006.4430564 ◽

2006 ◽

Author(s):

Jeffrey Chen

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Low Temperature Bonding Polycrystalline Diamond to Si by Using Au Thin-layer for High-power Semiconductor Devices

10.1109/icept52650.2021.9568004 ◽

2021 ◽

Author(s):

Yi Zhong ◽

Shuchao Bao ◽

Ke Li ◽

Mingchuan Zhang ◽

Daquan Yu

Keyword(s):

Low Temperature ◽

Semiconductor Devices ◽

Polycrystalline Diamond ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Low Temperature Bonding

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Simulation of the Transient Temperature Distribution in a Cooling Apparatus for High-Power Semiconductor Devices Using Heat Pipes.

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B ◽

10.1299/kikaib.62.1172 ◽

1996 ◽

Vol 62 (595) ◽

pp. 1172-1177

Author(s):

Osamu SUZUKI ◽

Kazumasa FUJIOKA ◽

Heikichi KUWAHARA ◽

Toshio TAKASAKI

Keyword(s):

Temperature Distribution ◽

Semiconductor Devices ◽

Transient Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Transient Temperature Distribution

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Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702664 ◽

2002 ◽

Author(s):

R. Barthelmess ◽

M. Beuermann ◽

D. Metzner ◽

G. Schmidt ◽

D. Westerholt ◽

...

Keyword(s):

Amorphous Carbon ◽

Semiconductor Devices ◽

Hydrogenated Amorphous Carbon ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Hydrogenated Amorphous

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High-power semiconductor devices. Review and comparative assessment

Russian Electrical Engineering ◽

10.3103/s106837120710001x ◽

2007 ◽

Vol 78 (10) ◽

pp. 509-514 ◽

Author(s):

S. Linder

Keyword(s):

Semiconductor Devices ◽

Comparative Assessment ◽

Power Semiconductor ◽

Power Semiconductor Devices

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High power semiconductor devices

10.1109/irecon.1965.1147502 ◽

2005 ◽

Author(s):

F. Gentry ◽

R. York

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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