Low Temperature Bonding Polycrystalline Diamond to Si by Using Au Thin-layer for High-power Semiconductor Devices

2021 ◽  
Author(s):  
Yi Zhong ◽  
Shuchao Bao ◽  
Ke Li ◽  
Mingchuan Zhang ◽  
Daquan Yu
Keyword(s):  
Low Temperature ◽  
Thin Layer ◽  
High Power ◽  
Semiconductor Devices ◽  
Polycrystalline Diamond ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Low Temperature Bonding

(Invited) High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

2019 ◽  
Vol 41 (8) ◽  
pp. 19-30 ◽  
Author(s):  
Matthew J. Marinella ◽  
Stanley Atcitty ◽  
Sandeepan DasGupta ◽  
Robert J. Kaplar ◽  
Mark A. Smith
Keyword(s):  
High Power ◽  
State Of The Art ◽  
Semiconductor Devices ◽  
Advanced Materials ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Current State

Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices

1999 ◽  
Vol 38 (Part 1, No. 11) ◽  
pp. 6232-6236 ◽  
Author(s):  
Toshiaki Morita ◽  
Mitsuo Kato ◽  
Jin Onuki ◽  
Hidekatsu Onose ◽  
Nobuyoshi Matsuura ◽  
...  
Keyword(s):  
High Power ◽  
High Reliability ◽  
Semiconductor Devices ◽  
Large Area ◽  
Low Loss ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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