Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

2019 ◽  
Vol 8 (4) ◽  
pp. P228-P238 ◽  
Author(s):  
Koji Sueoka ◽  
Yuji Mukaiyama ◽  
Susumu Maeda ◽  
Masaya Iizuka ◽  
Vasif M. Mamedov
Keyword(s):  
Computer Simulation ◽  
Crystal Growth ◽  
Point Defect ◽  
Concentration Distribution ◽  
Large Diameter ◽  
Intrinsic Point Defect

(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

2018 ◽  
Vol 86 (10) ◽  
pp. 3-24
Author(s):  
Koji Sueoka ◽  
Yuji Mukaiyama ◽  
Koji Kobayashi ◽  
Hiroaki Fukuda ◽  
Shunta Yamaoka ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Crystal Growth ◽  
Point Defect ◽  
Large Diameter ◽  
Intrinsic Point Defect ◽  
Defect Distribution

Influence of anisotropic thermal stress during Si crystal growth on intrinsic point defect formation

2017 ◽  
Vol 2017.30 (0) ◽  
pp. 087
Author(s):  
Eiji Kamiyama ◽  
Yoshiaki Abe ◽  
Hironori Banba ◽  
Hiroyuki Saito ◽  
Susumu Maeda ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Point Defect ◽  
Defect Formation ◽  
Intrinsic Point Defect

Thermal Optimization of Cz Silicon Single Crystal Growth

2009 ◽  
Vol 156-158 ◽  
pp. 217-222 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub ◽  
M.G. Milvidskii
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Intrinsic Point Defect ◽  
Thermal Shield ◽  
Internal Cone ◽  
Hot Zone

In an application to large diameter Czochralski (CZ) silicon (Si) single crystal growing the influence on crystal temperature field of various thermal shield assemblies located near to its surface is discussed. By means of mathematical modeling the computer model of thermal processes in an application to a hot zone of "Redmet-90" puller [1], intended for 200 and 300 mm diameter Si single crystal growth is developed. The role of the ring shield and the shield assembly, consisting of two shields (an internal cone and an external one is repeating the crucible shape) and being as a basis of some patents, is investigated. On the basis of the carried out calculations the new thermal shield assembly for "Redmet-90" puller was offered. Its influence on formation of the characteristic thermal zones in growing single crystal, corresponding to defect formation processes in dislocation-free Si crystals (the recombination of intrinsic point defect – IPD, and the formation of their agglomerates) is discussed. The influence of a melt flow on the liquid/solid interface (LSI) shape and thermal stability of crystal growing process is analyzed.

On intrinsic point defect cluster formation during Czochralski crystal growth

2009 ◽  
Vol 6 (8) ◽  
pp. 1906-1911 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Cluster Formation ◽  
Defect Cluster ◽  
Intrinsic Point Defect ◽  
Czochralski Crystal Growth

A Comparison of Intrinsic Point Defect Properties in Si and Ge

2008 ◽  
Vol 1070 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Eddy Simoen ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Point Defects ◽  
Defect Formation ◽  
Lattice Defect ◽  
Intrinsic Point Defect ◽  
Thermal Treatments ◽  
Intrinsic Point Defects ◽  
Device Processing ◽  
Processing Point

ABSTRACTIntrinsic point defects determine to a large extent the semiconductor crystal quality both mechanically and electrically not only during crystal growth or when tuning polished wafer properties by thermal treatments, but also and not the least during device processing. Point defects play e.g. a crucial role in dopant diffusion and activation, in gettering processes and in extended lattice defect formation.Available experimental data and results of numerical calculation of the formation energy and diffusivity of the intrinsic point defects in Si and Ge are compared and discussed. Intrinsic point defect clustering is illustrated by defect formation during Czochralski crystal growth.

Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

2006 ◽  
Vol 9 (4-5) ◽  
pp. 465-470 ◽  
Author(s):  
P. Śpiewak ◽  
K.J. Kurzydłowski ◽  
J. Vanhellemont ◽  
P. Clauws ◽  
P. Wabiński ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Intrinsic Point Defect ◽  
Germanium Crystal
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