Междолинные процессы релаксации состояний мелких доноров в германии

The role of the intervalley processes of electron-phonon interaction in the relaxation of excited shallow arsenic donors in germanium is analyzed. The rates of intracenter inter-valley transitions with emission of TA phonons in ger-manium are calculated in dependence on the uniaxial compression stress along {111} crystallographic direction. It is shown that inter-valley transitions to the ground state of the donor with emission of phonons can play a significant role in the relaxation of excited impurities only upon uniaxial stress of the crystal, since at zero stress, there are no exact resonances between impurity transitions and intervalley phonons. There are also transitions from highly excited states lying in a narrow band of energies (~ 0.5 meV) under very bottom of the conduction band to the first excited state 1s(3)(Г5) (in stressed germanium crystal to 1s(3)(Г3) state). The average rate of these transitions is estimated at 0.3×109 s-1.

О возможности интерференции Рамсея в германии, легированном мелкими примесями

Dynamics of creation and distraction of coherent states resonantly excited by pair of laser pulses following each other with temporal delay in germanium crystal doped with shallow impurities has been theoretically considered. The power of excited radiation, lattice tempera-ture and limit permissible of inhomogeneous line broadening that necessary to observe of Ramsey interference in such system have been estimated.

Внутрицентровая релаксация мелких доноров сурьмы в деформированном германии

Long-wave acoustic phonons assisted relaxation ratesof the lower excited states 1s(T), 2p0, 2s, 3p0, 2p±, 4p0,3p±of antimony donors in a germanium crystal are calculated.The influence of uniaxial stress in the crystallographic direction[111]on relaxation rates has been considered. The calculationresults have been compared with the measurement data ofrelaxation times of nonequilibrium donor states by the pump-probe method. A comparison is also made with the lifetimesobtained experimentally by the method of studying submillimeterphotoconductivity.

AniCryDe: calculation of elastic properties in silicon and germanium crystals

A code to calculate the anisotropic elastic properties in a silicon or germanium crystal is introduced. The program, namedAniCryDe, allows the user to select the crystallographic configuration of interest. For the selected crystallographic orientation,AniCryDecalculates several key mechanical parameters, such as Young's modulus, Poisson's ratio and the shear modulus. Furthermore, the program displays both the compliance and the stiffness tensors concerning the crystallographic orientation of interest. The code enables the user to set several parameters through a user-friendly control stage. As a result, the user obtains the complete displacement field of a deformed crystal and the curvature of any crystallographic plane. Manufacturing wafer defects such as miscut and misflat angle are also taken into account.