Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

2006 ◽  
Vol 9 (4-5) ◽  
pp. 465-470 ◽  
Author(s):  
P. Śpiewak ◽  
K.J. Kurzydłowski ◽  
J. Vanhellemont ◽  
P. Clauws ◽  
P. Wabiński ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Intrinsic Point Defect ◽  
Germanium Crystal

(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

2018 ◽  
Vol 86 (10) ◽  
pp. 3-24
Author(s):  
Koji Sueoka ◽  
Yuji Mukaiyama ◽  
Koji Kobayashi ◽  
Hiroaki Fukuda ◽  
Shunta Yamaoka ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Crystal Growth ◽  
Point Defect ◽  
Large Diameter ◽  
Intrinsic Point Defect ◽  
Defect Distribution

Influence of anisotropic thermal stress during Si crystal growth on intrinsic point defect formation

2017 ◽  
Vol 2017.30 (0) ◽  
pp. 087
Author(s):  
Eiji Kamiyama ◽  
Yoshiaki Abe ◽  
Hironori Banba ◽  
Hiroyuki Saito ◽  
Susumu Maeda ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Point Defect ◽  
Defect Formation ◽  
Intrinsic Point Defect

On intrinsic point defect cluster formation during Czochralski crystal growth

2009 ◽  
Vol 6 (8) ◽  
pp. 1906-1911 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Cluster Formation ◽  
Defect Cluster ◽  
Intrinsic Point Defect ◽  
Czochralski Crystal Growth

A Comparison of Intrinsic Point Defect Properties in Si and Ge

2008 ◽  
Vol 1070 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Eddy Simoen ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Point Defects ◽  
Defect Formation ◽  
Lattice Defect ◽  
Intrinsic Point Defect ◽  
Thermal Treatments ◽  
Intrinsic Point Defects ◽  
Device Processing ◽  
Processing Point

ABSTRACTIntrinsic point defects determine to a large extent the semiconductor crystal quality both mechanically and electrically not only during crystal growth or when tuning polished wafer properties by thermal treatments, but also and not the least during device processing. Point defects play e.g. a crucial role in dopant diffusion and activation, in gettering processes and in extended lattice defect formation.Available experimental data and results of numerical calculation of the formation energy and diffusivity of the intrinsic point defects in Si and Ge are compared and discussed. Intrinsic point defect clustering is illustrated by defect formation during Czochralski crystal growth.

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