Nanowire-Based Thin-Film Devices as High-Performance Transparent and Flexible Electronics

Room temperature liquid metal (LM) showcases a great promise in the fields of flexible functional thin film due to its favorable characteristics of flexibility, inherent conductivity, and printability. Current fabrication strategies of liquid metal film are substrate structure specific and sustain from unanticipated smearing effects. Herein, this paper reported a facile fabrication of liquid metal composite film via sequentially regulating oxidation to change the adhesion characteristics, targeting the ability of electrical connection and electrothermal conversion. The composite film was then made of the electrically resistive layer (oxidizing liquid metal) and the insulating Polyimide film (PI film) substrate, which has the advantages of electrical insulation and ultra-wide temperature working range, and its thickness is only 50 μm. The electrical resistance of composite film can maintain constant for 6 h and could work normally. Additionally, the heating film exhibited excellent thermal switching characteristics that can reach temperature equilibrium within 100 s, and recovery to ambient temperature within 50 s. The maximum working temperature of the as-prepared film is 115 °C, which is consistent with the result of the theoretical calculation, demonstrating a good electrothermal conversion capability. Finally, the heating application under extreme low temperature (−196 °C) was achieved. This conceptual study showed the promising value of the prototype strategy to the specific application areas such as the field of smart homes, flexible electronics, wearable thermal management, and high-performance heating systems.

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Direct printing of aligned carbon nanotube patterns for high-performance thin film devices

Applied Physics Letters ◽

10.1063/1.3073748 ◽

2009 ◽

Vol 94 (5) ◽

pp. 053109 ◽

Cited By ~ 23

Author(s):

Jiwoon Im ◽

Il-Ha Lee ◽

Byung Yang Lee ◽

Byeongju Kim ◽

June Park ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

High Performance ◽

Direct Printing ◽

Thin Film Devices

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Design of Tool for Exfoliation of Monocrystalline Microscale Silicon Films

Journal of Micro and Nano-Manufacturing ◽

10.1115/1.4043420 ◽

2019 ◽

Vol 7 (1) ◽

Cited By ~ 1

Author(s):

Martin Ward ◽

Michael Cullinan

Keyword(s):

Thin Film ◽

Surface Roughness ◽

Flexible Electronics ◽

High Performance ◽

Single Crystal Silicon ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Crystal Silicon ◽

Electronic Products

This paper presents the development of a prototype exfoliation tool and process for the fabrication of thin-film, single crystal silicon, which is a key material for creating high-performance flexible electronics. The process described in this paper is compatible with traditional wafer-based, complementary metal–oxide–semiconductor (CMOS) fabrication techniques, which enables high-performance devices fabricated using CMOS processes to be easily integrated into flexible electronic products like wearable or internet of things devices. The exfoliation method presented in this paper uses an electroplated nickel tensile layer and tension-controlled handle layer to propagate a crack across a wafer while controlling film thickness and reducing the surface roughness of the exfoliated devices as compared with previously reported exfoliation methods. Using this exfoliation tool, thin-film silicon samples are produced with a typical average surface roughness of 75 nm and a thickness that can be set anywhere between 5 μm and 35 μm by changing the exfoliation parameters.

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Directly deposited MoS2thin film electrodes for high performance supercapacitors

Journal of Materials Chemistry A ◽

10.1039/c5ta08095a ◽

2015 ◽

Vol 3 (47) ◽

pp. 24049-24054 ◽

Cited By ~ 88

Author(s):

Nitin Choudhary ◽

Mumukshu Patel ◽

Yee-Hsien Ho ◽

Narendra B. Dahotre ◽

Wonki Lee ◽

...

Keyword(s):

Thin Film ◽

Flexible Electronics ◽

High Performance ◽

Cyclic Stability ◽

Two Dimensional ◽

Polymer Substrates ◽

Energy Devices ◽

Direct Deposition ◽

Cu Foil

We demonstrate the direct deposition of two-dimensional (2D) MoS2thin film on Cu-foil and polymer substrates, exhibiting an excellent capacitance and outstanding cyclic stability. The MoS2based supercapacitors will enable new opportunities in flexible electronics and energy devices.

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Small-Angle Scattering to Reveal the Colloidal Nature of Halide Perovskite Precursor Solution

Journal of Materials Chemistry A ◽

10.1039/d1ta01468d ◽

2021 ◽

Author(s):

Marion Flatken ◽

Armin Hoell ◽

Robert Wendt ◽

Eneli Härk ◽

Andre Dallmann ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Small Angle ◽

High Performance ◽

Low Cost ◽

Precursor Solution ◽

Angle Scattering ◽

Halide Perovskites ◽

Halide Perovskite ◽

Thin Film Devices

Halide perovskites are crystalline semiconductors gaining incremental attention as low-cost, high-performance materials for optoelectronics. Their processing from solution at low temperature is compatible with fast manufacturing of thin-film devices, including...

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Improved Electrical and Mechanical Properties of Niti/TiOx/PZT/TiOx Thin Film Heterostructures

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.185.25 ◽

2012 ◽

Vol 185 ◽

pp. 25-27 ◽

Cited By ~ 1

Author(s):

Nitin Choudhary ◽

D.K. Kharat ◽

Davinder Kaur

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Shape Memory Alloy ◽

Shape Memory ◽

High Performance ◽

Piezoelectric Properties ◽

Nickel Titanium ◽

Excellent Candidate ◽

Dielectric And Piezoelectric Properties ◽

Thin Film Devices

Nickel-titanium (NiTi) alloys are high-performance shape memory alloy actuator materials [1]. These alloys are metals possessing a memory, which can be triggered thermally or mechanically. Thin film of nickel-titanium shape memory alloy (SMA) is an excellent candidate for micro electric mechanical systems (MEMS). On the other hand, PZT is well known for its superior ferroelectric, dielectric and piezoelectric properties [2]. Integrating a ferroelectric (PZT) with ferroelastic (NiTi) material is technically interesting as the resulting heterostructure may then produce the properties associated with both of the materials and enhances the performance of MEMS based devices [3]. An important issue in the synthesis of NiTi/PZT hybrid heterostructure is the formation of appropriate crystalline phases of each material. The interdiffusions present at the interface of NiTi and PZT layer makes it difficult to obtain the optimal properties of both the components suitably at lower thickness values. With the miniaturization of active thin film devices, particularly for MEMS applications, it is desirable to obtain the best properties at lower thickness values. Therefore, in the present study, we have tried to lower the thickness of top NiTi films with the help of thin TiOx buffer layer between PZT and NiTi films. As expected, the excellent structural, electrical and mechanical properties of the NiTi/PZT heterostructure were achieved at lower thickness values.

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