scholarly journals Defects Origin on Epitaxial Silicon Layer on a Double-Porous Silicon Layer

2011 ◽  
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Epitaxial Silicon ◽  
Epitaxial Silicon Layer

Experimental Verification of a Random Medium Model for the Optical Behaviour of Ultrathin Crystalline Silicon Layers Grown on Porous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
L. Stalmans ◽  
A.A. Abouelsaood ◽  
M.Y. Ghannam ◽  
J. Poortmans ◽  
H. Bender ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Random Medium ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Epitaxial Silicon ◽  
Medium Model ◽  
Layer Structures ◽  
Appreciable Reduction

AbstractThe random medium model for porous silicon (PS) is applied to a porous silicon layer to be used as a back reflector in a thin film silicon solar cell realized in an ultrathin epitaxially grown Si layer on PS. Three-layer-structures (epi/PS/Si) have been fabricated by RPCVD of 150-1000 nm epitaxial silicon layers on the porous surface of silicon wafers. The light reflection has been measured in the 300-1000 nm wavelength range. An excellent agreement is found between the experimentally measured reflectance curves and those calculated using the random medium model. The analysis shows that the epitaxial growth has led to an appreciable reduction in the porosity in the intermediate PS layer from about 60% to 20-30%.

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

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