scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

ChemInform Abstract: Porous Silicon Oxide Layer Formation by the Electrochemical Treatment of a Porous Silicon Layer.

ChemInform ◽  
1990 ◽  
Vol 21 (47) ◽  
Author(s):  
M. YAMANA ◽  
N. KASHIWAZAKI ◽  
A. KINOSHITA ◽  
T. NAKANO ◽  
M. YAMAMOTO ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Electrochemical Treatment ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Silicon Oxide Layer

Formation of Porous Silicon Nanostructures in NH4F/C3H8O3 Solution

2015 ◽  
Vol 1131 ◽  
pp. 25-34
Author(s):  
Chanika Puridetvorakul ◽  
Chalongwut Boonpratum ◽  
Wandee Onreabroy ◽  
Tula Jutarosaga
Keyword(s):  
Porous Silicon ◽  
High Surface ◽  
Silicon Layer ◽  
Average Diameter ◽  
Porous Silicon Layer ◽  
Silicon Nanostructures ◽  
Porous Structures ◽  
Using Data ◽  
P Type ◽  
Anodization Method

Nanostructured porous silicon layer were successfully formed by an anodization method in viscous electrolyte containing glycerol and NH4F solution. P-type (100) silicon wafers were anodized with various anodizing times (1-8 h), NH4F concentrations (0.5-3 M) and applied voltages (10-30 V). The current density characteristic during anodizing and the morphology of porous silicon were measured using data acquisition loggers and field emission electron microscope (FE-SEM), respectively. The anodized surface produced high surface roughness and showed two types of porous structures consisting of macropores (macro-PSi) and mesopores (meso-PSi). The meso-Psi located in the macro-PSi structures. The size of macro-PSi increased with the increase of anodization time, the decrease of NH4F concentration and the decrease of applied voltage. The average diameter and depth of macro-PSi varied from 0.34 to 1.40 μm and 54 to 446 nm, respectively. For the meso-PSi, this method can produce an average diameter and thickness of mesopores in the range of 19-33 nm and 52-157 nm, respectively.

A Systematic Study of the Structural and Luminescence Properties of P-Type Porous Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
H. Yoon ◽  
M. S. Goorsky
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Storage Time ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Luminescence Properties ◽  
Strained Layers ◽  
X Ray ◽  
P Type ◽  
The Relationship

AbstractThe structural and luminescence properties of (001) p-type porous silicon samples (p∼0.1-0.2 Ω•cm) fabricated electrochemically under various conditions were investigated using high resolution double and triple axis diffraction and photoluminescence spectroscopy. We show the sensitivity of the structure of the porous silicon to the current density in the range of 10-50 mA/cm2, HF acid concentration in the range of 15% - 30%, and the evolution of the structure with time. We have found a systematic dependence of the amount of strain in the porous silicon layer (PSL) on the current density. The effect of the HF concentration is such that at 25% and 30% HF, PSLs are formed which are crystalline and strained, but at a lower HF concentration (15%), strained layers are not formed. The perpendicular strain in the layer increases linearly with storage time but the in-plane lattice constant of the porous silicon remains matched to the substrate. Further, we utilized x-ray reciprocal space maps to observe that, with storage time, there is an increase in the diffuse scattering from the PSL due to an increase in the range of tilts in the layer. Room temperature photoluminescence emission was observed for all 15% and 25% HF samples, but not for all 30% HF samples. Higher peak luminescence energy was obtained with lower HF concentration. Finally, we note the relationship between the strain in the PSL and the luminescence properties.

scholarly journals Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching

2018 ◽  
Vol 80 ◽  
pp. 30-39
Author(s):  
Hasan A Hadi
Keyword(s):  
Porous Silicon ◽  
Optical Microscopy ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Diffraction Peak ◽  
Etching Time ◽  
Layer Formation ◽  
Xrd Patterns

In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns show that one diffraction peak for all PSL through anodization duration and it is assigned to the (400) plane and data confirmed the porous silicon PS was nanocrystalline.

Formation of a Low Reflective Surface on Silicon Solar Cells by Chemical Treatment Using Ag-Assisted Electroless Etching

2012 ◽  
Vol 512-515 ◽  
pp. 43-46
Author(s):  
Guo Feng Ma ◽  
Hong Ling Zhang ◽  
Xue Fei Yang
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon Solar Cells ◽  
Mixed Solution ◽  
Etching Solution ◽  
Electroless Etching ◽  
Ag Particle ◽  
P Type

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. The porous silicon layer was formed in a mixed solution of H2O2and HF by using screen-printed Ag front electrodes as the catalyst. And influence of the different concentration etching solution (HF and AgNO3) on the porous silicon layer was study by scanning electron microscopy (SEM). Through investigation of the track of catalyst particles, it was shown that Ag really catalyses the etching of silicon underneath Ag particle.

Microstructure of pores in N+-silicon layers

1987 ◽  
Vol 45 ◽  
pp. 252-253
Author(s):  
V. S. Kaushik
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Porous Layers ◽  
Doped Silicon ◽  
Oxidized Porous Silicon ◽  
P Type

Oxidized porous silicon has drawn considerable interest as one of the alternatives for implementing silicon-on-insulator technology. Buried porous layers can be formed by utilizing the preferential pore formation in highly doped silicon during anodic etching in hydrofluoric acid. This porous silicon layer (PSL) can be subsequently oxidized rapidly at low temperatures to yield a device-quality silicon island layer, which is dielectrically isolated from the substrate. Although pores can be formed in both n-type and p-type silicon, the latter has received more attention. This paper presents the results of cross-sectional TEM (XTEM) observations of the microstructure of pores in n+ silicon.Samples used in this study were n- /n+/n- doped silicon (001) wafers which had been anodically etched in a hydrofluoric acid solution to form the PSL in the n+ layer via trenches etched through the n- surface layer.

Porous Silicon Oxide Layer Formation by the Electrochemical Treatment of a Porous Silicon Layer

1990 ◽  
Vol 137 (9) ◽  
pp. 2925-2927 ◽  
Author(s):  
M. Yamana ◽  
N. Kashiwazaki ◽  
A. Kinoshita ◽  
T. Nakano ◽  
M. Yamamoto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Electrochemical Treatment ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Silicon Oxide Layer

STRUCTURAL AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON: EFFECT OF HF CONCENTRATION

2006 ◽  
Vol 13 (04) ◽  
pp. 351-356 ◽  
Author(s):  
B. NATARAJAN ◽  
V. RAMAKRISHNAN ◽  
V. VASU ◽  
S. RAMAMURTHY
Keyword(s):  
Porous Silicon ◽  
Chemical Species ◽  
Silicon Layer ◽  
Spectral Shift ◽  
Porous Silicon Layer ◽  
Atomic Force ◽  
Prepared Material ◽  
Alloy Effect ◽  
To Come ◽  
P Type

Structural and Photoluminescence (PL) studies are carried out for p-type porous silicon materials prepared with different Hydrogen Fluoride (HF) concentration. Surface morphology of porous silicon was analyzed using atomic force microscope (AFM). Fourier Transform Infra Red (FTIR) spectra indicate that surface of porous silicon contain chemical species like SiH n. PL studies reveal that there is a prominent emission peak around 625 nm. No spectral shift is observed. It is further observed that the emission intensity increases with HF concentration. The PL of the porous silicon layer was found to come from its upper part, which was confirmed by a simulation of the PL spectrum employing an optical model. The refractive indices of the porous silicon layer were also determined through this simulation. The large hydrogen concentration in freshly prepared material has led to the suggestion that a silicon–hydrogen alloy effect is responsible for the luminescence.

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