Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.

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Low-temperature plasma oxidation of activated carbons

Carbon ◽

10.1016/s0008-6223(02)00153-7 ◽

2002 ◽

Vol 40 (11) ◽

pp. 2028-2030 ◽

Cited By ~ 6

Author(s):

L.I Schukin ◽

M.V Kornievich ◽

R.S Vartapetjan ◽

S.I Beznisko

Keyword(s):

Low Temperature ◽

Activated Carbons ◽

Plasma Oxidation ◽

Low Temperature Plasma ◽

Temperature Plasma

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Finding interstitial oxygen in an Si substrate during low-temperature plasma oxidation

Applied Physics Letters ◽

10.1063/1.1568168 ◽

2003 ◽

Vol 82 (16) ◽

pp. 2682-2684 ◽

Cited By ~ 13

Author(s):

Bo Hyun Kim ◽

Jin Hyung Ahn ◽

Byung Tae Ahn

Keyword(s):

Low Temperature ◽

Interstitial Oxygen ◽

Plasma Oxidation ◽

Low Temperature Plasma ◽

Si Substrate ◽

Temperature Plasma

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A Dual-Function UHV-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures

MRS Proceedings ◽

10.1557/proc-300-581 ◽

1993 ◽

Vol 300 ◽

Author(s):

S. Hattiangady ◽

X-L Xu ◽

M.J. Watkins ◽

B. Hornung ◽

V. Misra ◽

...

Keyword(s):

Low Temperature ◽

Thermal Processing ◽

Chemical Vapor ◽

Dual Function ◽

Low Temperature Plasma ◽

Interface Formation ◽

Temperature Plasma ◽

Oxide Heterostructures ◽

Mos Devices

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.

Download Full-text