(Invited) Threshold Voltage Modulation By Interface Charge Engineering for High Performance Enhancement-Mode Al2O3/GaN Power Mosfets

2016 ◽  
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Performance Enhancement ◽  
Power Mosfets ◽  
Enhancement Mode ◽  
Interface Charge

7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

2016 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Qi Zhou ◽  
Li Liu ◽  
Anbang Zhang ◽  
Bowen Chen ◽  
Yang Jin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Interface Charge

A high-performance enhancement-mode AlGaN/GaN HEMT

2010 ◽  
Vol 31 (8) ◽  
pp. 084001 ◽  
Author(s):  
Feng Zhihong ◽  
Xie Shengyin ◽  
Zhou Rui ◽  
Yin Jiayun ◽  
Zhou Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Gan Hemt

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

Nano Research ◽  
2018 ◽  
Vol 11 (3) ◽  
pp. 1227-1237 ◽  
Author(s):  
Hongchao Zhang ◽  
You Meng ◽  
Longfei Song ◽  
Linqu Luo ◽  
Yuanbin Qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Mg Doped

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors

ACS Nano ◽  
2012 ◽  
Vol 7 (1) ◽  
pp. 804-810 ◽  
Author(s):  
Xuming Zou ◽  
Xingqiang Liu ◽  
Chunlan Wang ◽  
Ying Jiang ◽  
Yong Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Metal Doped
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