Threshold voltage modulation by interface charge engineering for high performance normally-off GaN MOSFETs with high faulty turn-on immunity

2016 ◽  
Author(s):  
Qi Zhou ◽  
Anbang Zhang ◽  
R. Zhu ◽  
Y. Shi ◽  
Z. Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Turn On ◽  
Interface Charge

7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

2016 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Qi Zhou ◽  
Li Liu ◽  
Anbang Zhang ◽  
Bowen Chen ◽  
Yang Jin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Interface Charge

New hole transport styrene polymers bearing highly π-extended conjugated side-chain moieties for high-performance solution-processable thermally activated delayed fluorescence OLEDs

2021 ◽  
Vol 12 (11) ◽  
pp. 1692-1699
Author(s):  
Ji Hye Lee ◽  
Jinhyo Hwang ◽  
Chai Won Kim ◽  
Amit Kumar Harit ◽  
Han Young Woo ◽  
...  
Keyword(s):  
High Performance ◽  
High Efficiency ◽  
Delayed Fluorescence ◽  
Hole Transport ◽  
Side Chain ◽  
Solution Processed ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated ◽  
Turn On ◽  
Solution Processable

New polystyrene-based polymers with high π-extended hole transport pendants were synthesized to obtain a low turn-on voltage and high efficiency in solution-processed green TADF-OLEDs.

A covalent organic polymer for turn-on fluorescence sensing of hydrazine

2022 ◽  
Author(s):  
Jiangpeng Wang ◽  
Canran Wang ◽  
Shan Jiang ◽  
Wenyue Ma ◽  
Bin Xu ◽  
...  
Keyword(s):  
High Performance ◽  
Fluorescent Sensor ◽  
Organic Polymer ◽  
Fluorescence Sensing ◽  
Turn On

A polymer, COP-Ta, was designed and synthesized. It served as a turn-on fluorescent sensor for hydrazine detection with high performance.

scholarly journals Silicon Quantum Dot Light Emitting Diode at 620 nm

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 318 ◽  
Author(s):  
Hiroyuki Yamada ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diode ◽  
Optically Active ◽  
Driving Voltage ◽  
Device Structure ◽  
Light Emitting ◽  
Naked Eye ◽  
Turn On ◽  
Silicon Quantum Dot

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

scholarly journals Tandem diaza-Cope rearrangement polymerization: turning intramolecular reaction into powerful polymerization to give enantiopure materials for Zn2+ sensors

2021 ◽  
Author(s):  
Soon-Hyeok Hwang ◽  
Tae-Lim Choi
Keyword(s):  
High Performance ◽  
Bond Formation ◽  
Cope Rearrangement ◽  
Turn On ◽  
Intramolecular Reaction

Herein, we report a new tandem diaza-Cope rearrangement polymerization synthesizing enantiopure polymers with defect-free C–C bond formation. Furthermore, these polymers can be applied as high-performance turn-on Zn2+ sensors.

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

Sign in / Sign up

Export Citation Format

Share Document