Selectorless Oxide-based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications

Crossbar Array ◽

Selectorless Oxide-Based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications

ECS Transactions ◽

10.1149/08903.0045ecst ◽

2019 ◽

Vol 89 (3) ◽

pp. 45-51 ◽

Cited By ~ 3

Author(s):

Ying-Chen Chen ◽

Chao-Cheng Lin ◽

Sungjun Kim ◽

Jack C. Lee

Keyword(s):

Low Power ◽

Resistive Switching ◽

Crossbar Array ◽

Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks

Advanced Intelligent Systems ◽

10.1002/aisy.201900116 ◽

2019 ◽

Vol 2 (2) ◽

pp. 1900116

Author(s):

Yumin Kim ◽

Jihun Kim ◽

Seung Soo Kim ◽

Young Jae Kwon ◽

Gil Seop Kim ◽

...

Keyword(s):

Neural Networks ◽

Convolutional Neural Networks ◽

Resistive Switching ◽

Crossbar Array ◽

Formation free low power resistive switching memory using IrOx/AlOx/W cross-point with excellent uniformity and multi level operation

10.7567/ssdm.2011.f-8-4 ◽

2011 ◽

Author(s):

W. Banerjee ◽

S. Z. Rahaman ◽

S. Maikap

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽

Multi Level ◽

Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017)

Advanced Electronic Materials ◽

10.1002/aelm.201770028 ◽

2017 ◽

Vol 3 (7) ◽

Cited By ~ 1

Author(s):

Kyung Jean Yoon ◽

Gun Hwan Kim ◽

Sijung Yoo ◽

Woorham Bae ◽

Jung Ho Yoon ◽

...

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Rectification Ratio ◽

Next Generation ◽

Crossbar Array ◽

Investigation on Amorphous Ga2O3 Based Conductive-Bridge Resistive Switching Memory with Low-Power, High-Speed, High Reliability

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/744 ◽

2018 ◽

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Speed ◽

High Reliability ◽

Conductive Bridge ◽

Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

2020 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw50361.2020.9131659 ◽

2020 ◽

Author(s):

Siddheswar Maikap ◽

Asim Senapati

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽

Conducting Filament ◽

Power Operation ◽

Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

Thin Solid Films ◽

10.1016/j.tsf.2013.09.033 ◽

2013 ◽

Vol 549 ◽

pp. 54-58 ◽

Cited By ~ 30

Author(s):

Yang-Shun Fan ◽

Po-Tsun Liu ◽

Ching-Hui Hsu

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Speed ◽

High Reliability ◽

Amorphous Ingazno ◽

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

10.1109/vlsi-tsa.2013.6545585 ◽

2013 ◽

Author(s):

D. Jana ◽

S. Maikap ◽

A. Prakash ◽

H. Y. Lee ◽

W. S. Chen ◽

...

Keyword(s):

Low Power ◽

Rough Surface ◽

Resistive Switching ◽

Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO$_{x}$/AlO$_{x}$/W Cross-Point

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dd10 ◽

2012 ◽

Vol 51 ◽

pp. 04DD10 ◽

Cited By ~ 3

Author(s):

Writam Banerjee ◽

Sk. Ziaur Rahaman ◽

Siddheswar Maikap

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽