Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
(Adv. Electron. Mater. 7/2017)
Kyung Jean Yoon
◽
Gun Hwan Kim
◽
Sijung Yoo
◽
Woorham Bae
◽
Jung Ho Yoon
◽
...
2017 ◽
Vol 3
(7)
◽
pp. 1700152
◽
Kyung Jean Yoon
◽
Gun Hwan Kim
◽
Sijung Yoo
◽
Woorham Bae
◽
Jung Ho Yoon
◽
...
2019 ◽
Vol 2
(2)
◽
pp. 1900116
Yumin Kim
◽
Jihun Kim
◽
Seung Soo Kim
◽
Young Jae Kwon
◽
Gil Seop Kim
◽
...
Jang-Woo Ryu
◽
Kee-Won Kwon
2019 ◽
Vol 89
(3)
◽
pp. 45-51
◽
Ying-Chen Chen
◽
Chao-Cheng Lin
◽
Sungjun Kim
◽
Jack C. Lee
2019 ◽
Vol 66
(12)
◽
pp. 5139-5146
◽
Shengjun Qin
◽
Zizhen Jiang
◽
Haitong Li
◽
Shosuke Fujii
◽
Dongjin Lee
◽
...
2019 ◽
Vol 66
(12)
◽
pp. 5147-5154
◽
Zizhen Jiang
◽
Shengjun Qin
◽
Haitong Li
◽
Shosuke Fujii
◽
Dongjin Lee
◽
...
2017 ◽
Vol 4
(6)
◽
pp. 065901
◽
Praveen K Jain
◽
Mohammad Salim
◽
Umesh Chand
◽
C Periasamy
2016 ◽
Vol 6
(1)
◽
pp. 015021
◽
Sungjun Kim
◽
Seongjae Cho
◽
Byung-Gook Park
2020 ◽
Vol 87
◽
pp. 105932
◽
Jitendra Singh
◽
R.G. Singh
◽
Subodh K. Gautam
◽
Himanshi Gupta
◽
Fouran Singh
Close
Export Citation Format
Close
Share Document
Close