Modeling of Advanced FinFET Dummy Gate Corner Residue Impacted By Clogging

2021 ◽  
Vol MA2021-02 (30) ◽  
pp. 941-941
Author(s):  
Xingyu Xiao ◽  
Xing Ke ◽  
Bo Su ◽  
Hai-Yang Zhang
Keyword(s):  
2012 ◽  
Vol 195 ◽  
pp. 42-45 ◽  
Author(s):  
Hiroaki Takahashi ◽  
Masayuki Otsuji ◽  
Jim Snow ◽  
Farid Sebaai ◽  
Kenichiro Arai ◽  
...  

Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.


2017 ◽  
Vol 80 (2) ◽  
pp. 155-162 ◽  
Author(s):  
Kurt Wostyn ◽  
Lars-Åke Ragnarsson ◽  
Tom Schram ◽  
Liesbeth Witters ◽  
Thierry Conard ◽  
...  

2012 ◽  
Vol 60 (5) ◽  
pp. 842-848 ◽  
Author(s):  
Behzad Ebrahimi ◽  
Behrouz Afzal ◽  
Ali Afzali-Kusha ◽  
Saeed Mohammadi
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2012 ◽  
Vol 41 (3) ◽  
pp. 162-168
Author(s):  
V. S. Arykov ◽  
A. M. Gavrilova ◽  
O. A. Dedkova ◽  
V. A. Kagadei ◽  
Yu. V. Lilenko
Keyword(s):  

2020 ◽  
Vol MA2020-02 (14) ◽  
pp. 1391-1391
Author(s):  
Changcheng Jiang ◽  
Xingyu Xiao ◽  
Xing Ke ◽  
Yanliang Wang ◽  
Yuchen Li ◽  
...  
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2008 ◽  
Vol 55 (12) ◽  
pp. 3555-3561 ◽  
Author(s):  
Marvin N. Marbell ◽  
Sergey V. Cherepko ◽  
Walter R. Curtice ◽  
James C. M. Hwang ◽  
M. Ayman Shibib
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