X-Ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

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Phase characterisation of TiO/sub 2/ thin films using micro-Raman spectroscopy and glancing angle X-ray diffraction

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ◽

10.1109/commad.2002.1237222 ◽

2005 ◽

Cited By ~ 1

Author(s):

J. Hugmann ◽

B.S. Richards ◽

A. Crosky

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

X Ray Diffraction ◽

X Ray ◽

Micro Raman Spectroscopy ◽

Glancing Angle

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A Novel Technique to Determine Elastic Constants of Thin Films

MRS Proceedings ◽

10.1557/proc-1139-gg03-31 ◽

2008 ◽

Vol 1139 ◽

Author(s):

Klaus Martinschitz ◽

Rostislav Daniel ◽

Christian Mitterer ◽

Keckes Jozef

Keyword(s):

Thin Film ◽

Thin Films ◽

Elastic Moduli ◽

Elastic Anisotropy ◽

Interaction Model ◽

X Ray Diffraction ◽

X Ray ◽

Anisotropic Factor ◽

Polycrystalline Thin Films ◽

Cu Thin Film

AbstractA new X-ray diffraction technique to determine elastic moduli of polycrystalline thin films deposited on monocrystalline substrates is demonstrated. The technique is based on the combination of sin2ψ and X-ray diffraction wafer curvature techniques which are used to characterize X-ray elastic strains and macroscopic stress in thin film. The strain measurements must be performed for various hkl reflections. The stresses are determined from the substrate curvature applying the Stoney's equation. The stress and strain values are used to calculate hkl reflection dependent X-ray elastic moduli. The mechanical elastic moduli can be then extrapolated from X-ray elastic moduli considering film macroscopic elastic anisotropy. The derived approach shows for which reflection and corresponding value of the X-ray anisotropic factor Γ the X-ray elastic moduli are equal to their mechanical counterparts in the case of fibre textured cubic polycrystalline aggregates. The approach is independent of the crystal elastic anisotropy and depends on the fibre texture type, the texture sharpness, the amount of randomly oriented crystallites and on the supposed grain interaction model. The new method is demonstrated on a fiber textured Cu thin film deposited on monocrystalline Si(100) substrate. The advantage of the new technique remains in the fact that moduli are determined non-destructively, using a static diffraction experiment and represent volume averaged quantities.

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Characterization of Physical Properties of Thermally Evaporated Doped CdS Thin Films for Photovoltaics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.510-511.156 ◽

2012 ◽

Vol 510-511 ◽

pp. 156-162 ◽

Cited By ~ 3

Author(s):

G.H. Tariq ◽

M. Anis-ur-Rehman

Keyword(s):

Thin Films ◽

Solar Cells ◽

Window Layer ◽

Bandgap Energy ◽

X Ray Diffraction ◽

X Ray ◽

Polycrystalline Thin Films ◽

Cds Thin Film ◽

Cds Thin Films ◽

Evaporation Technique

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

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TEM identification of secondary phases in non-stoichiometric polycrystalline CuInSe2 thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176150 ◽

1990 ◽

Vol 48 (4) ◽

pp. 604-605

Author(s):

J.P. Goral ◽

M.M. Al-Jassim ◽

D. Albin ◽

J.R. Tuttle ◽

R. Noufi

Keyword(s):

Thin Films ◽

Low Cost ◽

Growth Conditions ◽

Chalcopyrite Structure ◽

Secondary Phases ◽

X Ray Diffraction ◽

Cationic Sublattice ◽

X Ray ◽

Polycrystalline Thin Films ◽

Deposition Parameters

Polycrystalline thin films of CuInSe2 and CuGaSe2 are currently being developed as low-cost photovoltaic devices. These films are vacuum-deposited onto molybdenum metallized alumina substrates. The film composition may be varied by manipulation of the deposition parameters. For photovoltaic applications, the desired phase has a stoichiometry close to CuInSe2. This compound is a zincblende variant, the cations and anions occupying separate fcc sublattices. Under certain growth conditions, the Cu and In atoms adopt an ordered configuration within the cationic sublattice resulting in the tetragonal chalcopyrite structure. Even when the deposition parameters are manipulated to produce nominally stoichiometric films, powder x-ray traces often exhibit anomalous peaks indicative of the presence of impurity phases. The identification of these minority phases by x-ray diffraction alone is not possible in this materials system due to low peak intensity and overlap considerations. The formation of the secondary phases has a detrimental effect on the electrical and optical properties of the thin film device.

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High‐resolution x‐ray diffraction measurements of residual stresses in polycrystalline thin films deposited on single crystalline substrates

Applied Physics Letters ◽

10.1063/1.116958 ◽

1996 ◽

Vol 69 (27) ◽

pp. 4242-4244 ◽

Cited By ~ 7

Author(s):

M. Levit ◽

E. Zolotoyabko ◽

B.‐Z. Weiss

Keyword(s):

Thin Films ◽

High Resolution ◽

Residual Stresses ◽

X Ray Diffraction ◽

Single Crystalline ◽

X Ray ◽

Polycrystalline Thin Films

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Synthesis and Characterization of MoS2 Thin Films Grown by Pulsed Laser Evaporation

MRS Proceedings ◽

10.1557/proc-140-277 ◽

1988 ◽

Vol 140 ◽

Cited By ~ 4

Author(s):

M. S. Donley ◽

P. T. Murray ◽

N. T. McDevitt

Keyword(s):

Thin Films ◽

Pulsed Laser ◽

Plasma Temperature ◽

Laser Evaporation ◽

X Ray Diffraction ◽

X Ray ◽

Plot Analysis ◽

Glancing Angle ◽

Substrate Temperatures

AbstractThe growth and characterization of MoS thin films grown by pulsed laser evaporation is investigated. TOF anafysis of the ions evaporated from an MoS2 target indicates that PLE results primarily in the evaporation of atomic Mo and S species; MoxSy clusters were also detected, but were present at a significantly Iower intensity. TOF velocity analysis indicates an effective plasma temperature of 1500K. Stoichiometric MoS2 films were grown at substrate temperatures between room temperature and 500ºC under the above laser conditions. XPS data is used to develop a Wagner chemical state plot. Analysis of the films by Raman spectroscopy and glancing angle x-ray diffraction indicates the films to be crystalline, hexagonal MoS2, with a tendency for basal plane orientation parallel to the substrate.

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X-Ray Diffraction and Conductivity Studies in Polycrystalline Thin Films of CuInTe2 with Excess Copper Content

phys stat sol (a) ◽

10.1002/pssa.2211340113 ◽

1992 ◽

Vol 134 (1) ◽

pp. 151-156 ◽

Cited By ~ 2

Author(s):

B. R. Sethi ◽

M. Dashtiani ◽

O. P. Sharma ◽

P. C. Mathur

Keyword(s):

Thin Films ◽

Copper Content ◽

X Ray Diffraction ◽

X Ray ◽

Excess Copper ◽

Polycrystalline Thin Films

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One-Step Electrodeposition of CIGS Thin Films from Alcohol Solution on Flexible Substrate

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.472 ◽

2008 ◽

Vol 368-372 ◽

pp. 472-475 ◽

Cited By ~ 2

Author(s):

F. Long ◽

Wei Min Wang ◽

Jian Jun Li ◽

Zheng Guang Zou

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Flexible Substrate ◽

Alcohol Solution ◽

X Ray Diffraction ◽

X Ray ◽

Polycrystalline Thin Films ◽

One Step ◽

Potential Curves ◽

Scanning Electron

CuIn1-xGaxSe2 (CIGS) precursor films were fabricated on Mo foils by one-step electrodeposition in water and alcohol solutions. The precursor films were annealed in Ar atmosphere at 450°C to synthesize the polycrystalline thin films. The current density vs. potential curves of Cu2+, In3+, Ga3+ and Se4+ was studied by cyclic voltammetry. The compositions of CIGS, were analyzed by energy dispersive X-ray spectrum. The morphology and phase structure of films was characterized by scanning electron microscopy and X-ray diffraction, respectively.

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Effect of Ti Sputtering Current on Structure of TiCrN Thin Films Prepared by Reactive DC Magnetron Co-Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.675-676.181 ◽

2016 ◽

Vol 675-676 ◽

pp. 181-184 ◽

Cited By ~ 4

Author(s):

Nirun Witit-Anun ◽

Amphol Teekhaboot

Keyword(s):

Thin Films ◽

Crystal Size ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Lattice Constants ◽

Atomic Force ◽

Glancing Angle ◽

Deposited Films ◽

Section Analysis

Titanium chromium nitride (TiCrN) thin films were deposited by reactive DC magnetron co-sputtering. The effect of Ti sputtering current (ITi) on the structure of the TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and elemental composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystallite size of less than 40 nm. The crystal size decreased from 39.9 nm to 33.5 nm, while the lattice constants increased from 4.139 Å to 4.162 Å, with increasing of the Ti sputtering current. The film thickness and roughness were found to increase from 397 nm to 615 nm and 3.7 nm to 6.3 nm, respectively, with increasing of the Ti sputtering current. The composition of the as-deposited films varied with the Ti sputtering current. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the Ti sputtering current.

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