Synthesis and Characterization of MoS2 Thin Films Grown by Pulsed Laser Evaporation

1988 ◽  
Vol 140 ◽  
Author(s):  
M. S. Donley ◽  
P. T. Murray ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Plasma Temperature ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plot Analysis ◽  
Glancing Angle ◽  
Substrate Temperatures

AbstractThe growth and characterization of MoS thin films grown by pulsed laser evaporation is investigated. TOF anafysis of the ions evaporated from an MoS2 target indicates that PLE results primarily in the evaporation of atomic Mo and S species; MoxSy clusters were also detected, but were present at a significantly Iower intensity. TOF velocity analysis indicates an effective plasma temperature of 1500K. Stoichiometric MoS2 films were grown at substrate temperatures between room temperature and 500ºC under the above laser conditions. XPS data is used to develop a Wagner chemical state plot. Analysis of the films by Raman spectroscopy and glancing angle x-ray diffraction indicates the films to be crystalline, hexagonal MoS2, with a tendency for basal plane orientation parallel to the substrate.

Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

1988 ◽  
Vol 128 ◽  
Author(s):  
P. T. Murray ◽  
M. S. Donley ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Thermodynamic Calculations ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTThe feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000°C. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Growth of Stoichiometric Bn Films by Pulsed Laser Evaporation

1988 ◽  
Vol 140 ◽  
Author(s):  
P. T. Murray ◽  
M. S. Donley ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Thermodynamic Calculations ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

AbstractThe feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000ºC. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

XPS and X-ray diffraction characterization of MoO3 thin films prepared by laser evaporation

2005 ◽  
Vol 2 (10) ◽  
pp. 3726-3729 ◽  
Author(s):  
J. Torres ◽  
J. E. Alfonso ◽  
L. D. López-Carreño
Keyword(s):  
Thin Films ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

SUPERCONDUCTING Bi-Sr-Ca-Cu-O THIN FILMS PREPARED BY THE PULSED-LASER EVAPORATION

1988 ◽  
Vol 02 (08) ◽  
pp. 999-1003
Author(s):  
F.M. ZHANG ◽  
Y.C. ZHANG ◽  
S.J. GU ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Nd:Yag Laser ◽  
Pulse Width ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

We report here the preparation of the superconducting Bi-Sr-Ca-Cu-O thin films on SrTiO 3(100) substrates by a Nd:YAG laser, which provides laser pulses with wavelength of 1.06µm and pulse width of 200ns. After the heat treatment at 850°C for half an hour in oxygen flow, the samples exhibit superconductivity with the zero resistance at 66.8K and the onset temperature around 84K. X-ray diffraction analyses show that the samples have the preferred orientation with the c-axis perpendicular to the substrate.

Characterization of Al and Al-Cr-Al Thin Films

1986 ◽  
Vol 77 ◽  
Author(s):  
O. F. De Lima ◽  
Y. Lepetre ◽  
M. B. Brodsky
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
The Individual ◽  
Perfect Continuity ◽  
Substrate Temperatures

ABSTRACTTEM, X-ray diffraction, and electrical resistivity measurements were used to study the microstructure and the growth of AI-Cr-AI film sandwiches, where the individual Al layers were 300 Å thick and the Cr thickness was varied between 0–10 atomic layers. The base vacuum was around 1.0 × 10−10 torr, substrate temperatures varied between 100–350 °C, and evaporation rates were 3Å/s for Al and ∼0.1 – 0.2 Å/s for Cr. All Al films had a strong (111) texture and showed a non-percolative island structure at 350 °C. The films became connected at lower substrate temperatures, reaching perfect continuity at 100°C. However, electrical conductivity is achieved also for the films deposited at 350 °C when one or more atomic layers of Cr are sandwiched between the Al layers. Results for the superconducting critical temperature and resistivity are discussed in terms of Cr diffusion into Al and the film size effect.

Characterization of Laser-Assisted Pulseid Laser Deiposited BaFe12O19

1992 ◽  
Vol 285 ◽  
Author(s):  
J.S. Horwitz ◽  
D.B. Chrisey ◽  
K.S. Grabowski ◽  
C.A. Carosella ◽  
P. Lubitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Excimer Laser ◽  
Thick Films ◽  
Barium Hexaferrite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Processing ◽  
Substrate Temperatures

ABSTRACTHigh quality, epitaxial barium hexaferrite (BaFe12O19) thin films have been deposited by pulsed laser deposition (PLD) onto basal plane sapphire at substrate temperatures of 900°C in 400 mTorr of oxygen. Thin films (< 500 nm) were smooth while thick films (> 1000 nm) had rough, polycrystalline surfaces and “soot-like” appearances. The integration of ferrite films with semiconductors will require thick films (< 70 μm) and low substrate processing temperatures (≤ 600°C). Films deposited at 600°C were mostly amorphous with the presence of some crystalline, non-hexaferrite material. In an effort to improve the quality of barium hexaferrite fihns, we have investigated the effects of excimer-laser-assisted PLD (LAPLD) on the growth of BaFe12O19. During the deposition, the substrate was illuminated with the output of a second pulsed excimer laser (KrF) weakly focused to an energy of 10 to 130 mJ/cm2. The output of the second laser was synchronized such that the delay between the vaporization laser and the annealing laser was 0 to 1 ms. The X-ray diffraction analysis of LAPLD films deposited at 600°C with an annealing fluence of 50 mJ/cm2 indicated that the films were a crystalline mixture of hexaferrite and non-hexaferrite phases. Both phases exhibited a preferred orientation characterized by narrow x-ray rocking curve widths (FWHM ∼ 1°). Magnetic properties (magnetic moment, saturation magnetization and coercive field) detennined from a vibrating sample magnetometer (VSM) also confirmed the presence of oriented hexaferrite material in the laser annealed samples. These results show clear advantages of LAPLD for improved structural and magnetic properties of BaFe12O19 deposited at substrate temperatures compatible with semiconducting materials.

Epitaxial growth of semiconducting LaVO3 thin films

2000 ◽  
Vol 15 (1) ◽  
pp. 1-3 ◽  
Author(s):  
Woong Choi ◽  
Timothy Sands ◽  
Kwang-Young Kim
Keyword(s):  
Thin Films ◽  
Activation Barrier ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermally Activated ◽  
Substrate Temperatures

Epitaxial thin films of LaVO3 were grown on (001) LaAlO3 substrates by pulsed laser deposition from a LaVO4 target in a vacuum ambient at substrate temperatures ≥500 °C. X-ray diffraction studies showed that epitaxial LaVO3 films consist of mixed domains of [110] and [001] orientations. Thermoprobe and four-probe conductivity measurements demonstrated the p-type semiconducting behavior of the epitaxial LaVO3 films. The temperature dependence of the conductivity is consistent with a thermally activated hopping mechanism with an activation barrier of 0.16 eV.

Mechanical properties of pulsed laser-deposited hydroxyapatite thin films for applications in biomedical implants

2002 ◽  
Vol 750 ◽  
Author(s):  
Hyunbin Kim ◽  
Yogesh K. Vohra ◽  
William R. Lacefield ◽  
Renato P. Camata
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Energy Density ◽  
Laser Energy ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Krf Excimer Laser ◽  
Average Size ◽  
Substrate Temperatures

ABSTRACTWe have obtained nanostructured hydroxyapatite thin films on titanium alloy substrates by pulsed laser deposition. Deposition was carried out using a KrF excimer laser (248 nm) with the energy density of 4 – 7 J/cm2 at substrate temperatures in the 550°C - 650°C range. The crystallinity of the coatings was probed by X-ray diffraction. Phase transitions from hydroxyapatite to other calcium phosphate compounds were observed with varying the substrate temperature during the growth process. Scanning electron microscopy revealed thin films made up of partially sintered nanoscale grains. The average size of nanoscale grains increased significantly with film thickness, suggesting a growth mechanism involving the coalescence of nanoscale grains. As the laser energy density increases, the hydroxyapatite crystallites in the coatings are oriented preferentially along the c-axis perpendicular to the substrate. Mechanical properties of the highly c-axis oriented coatings such as hardness and Young's modulus were studied by using nanoindentation technique.

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