LM-ACT for Imaging RAM Devices in X-ray Diffraction Topographs

Analysis of serai conductor material and associated integrated circuits (IC) is imperative for ensuring quality products. Currently, routine circuit testing is dominated by measurement of the optical and electrical material/device properties through final device performance and parametric testing.Characterization of the crystal microstructure still is not considered a routine process test. Structural characterization usually is based on double-crystal rocking curves, x-ray topography, or a combination of these techniques.