Dependence of the Sheet Resistivity and Current Noise Behaviour of the Grain Size and Volume Fraction of Conducting Material in Thick-Film Resistors Experiments

Experimental results concerning the dependence of the sheet resistivity and the noise coefficient on the grain size and the volume fraction, respectively, of the metallic-like component in Bi2Ru2O7-based thick-film resistors are presented. The results are compared with current models for the electrical conduction mechanism in these resistors.

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On Experimental Data of the TCR of TFRs and Their Relation to Theoretical Models of Conduction Mechanism

ElectroComponent Science and Technology ◽

10.1155/apec.11.255 ◽

1985 ◽

Vol 11 (4) ◽

pp. 255-259 ◽

Cited By ~ 3

Author(s):

I. Storbeck ◽

M. Wolf

Keyword(s):

Experimental Data ◽

Grain Size ◽

Theoretical Model ◽

Temperature Dependence ◽

Electrical Conduction ◽

Conduction Mechanism ◽

Volume Fraction ◽

Theoretical Models ◽

Strain Dependence ◽

Conducting Component

Any theory of electrical conduction in TFRs encounters mainly two problems: (i) explanation of the dependence of R□on properties of conducting component (volume fraction, grain size, resistivity), (ii) explanation of the temperature dependence of R□taking into account (i). In order to achieve this one has to fit some microscopic parameters to experimental R□-and TCR-values, and to check if they are reasonable or not. The aim of the following discussion is to show, that such a fitting by means of experimental TCR-values is not correct. This is due to the fact that TCR-behaviour, as is well known, is determined also by the dependence of resistivity on strain. But any theoretical model neglects strains, also those who are induced by thermal strains. By means of published experiments concerning the strain dependence of resistance, the magnitude is estimated by which the TCR-values have to be corrected for the described fit.

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Comment on the Dependence of R□and Current Noise on Grain Size in Thick Film Resistors (TFR's)

Active and Passive Electronic Components ◽

10.1155/1985/68618 ◽

1985 ◽

Vol 12 (1) ◽

pp. 59-61 ◽

Cited By ~ 5

Author(s):

M. Wolf ◽

F. Müller ◽

H. Hemschik

Keyword(s):

Grain Size ◽

Thick Film ◽

Volume Fraction ◽

The Other ◽

Current Noise ◽

Heterogeneous Structure ◽

High Current ◽

Bulk Resistivity ◽

Metallic Component ◽

Other Hand

The heterogeneous structure of TFR's results in high resistivities and high current noise. Accepting models of conduction in TFR's, according to which the resistivity is determined by a resistance independent of bulk-resistivity of a metallic-like component, it will be shown, that R□andCeff*(describing current noise behaviour) increase with d and d3, respectively, when d is the grain size. On the other hand, both quantities depend on the volume fraction of the metallic component in the same manner. This leads to the conclusion, that a general dependence in the formCeff*= f(R□) cannot exist.

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