scholarly journals ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Yanli Liu ◽  
Yufang Li ◽  
Haibo Zeng

ZnO-based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium-tin-oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO-based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low-temperature, and high-speed deposition technologies. In addition, we highlighted the methods of producing ZnO-based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum-processing-parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO-based transparent conductive films.

2014 ◽  
Vol 34 (10) ◽  
pp. 1031003
Author(s):  
胡慧 Hu Hui ◽  
张丽平 Zhang Liping ◽  
孟凡英 Meng Fanying ◽  
刘正新 Liu Zhengxin

2013 ◽  
Vol 768 ◽  
pp. 70-74 ◽  
Author(s):  
Pradeep Kumar Mishra ◽  
Yogendra K. Gautam ◽  
J.N. Prasad ◽  
A.K. Choudhary ◽  
Ramesh Chandra

CuIn0.8Ga0.2Se2 (CIGS) thin films have been successfully deposited on soda lime glass substrate at different working (Ar gas) pressures by Pulsed laser deposition (PLD). The effect of working pressure on the structural, electrical and optical properties of CIGS thin films has been investigated. All deposited CIGS thin films are found to be polycrystalline in nature with preferred orientation along (112). Crystallinity of CIGS thin films has been improved with decreasing of working pressures in PLD chamber. Stoichiometry of CIGS thin films has been maintained for all working pressures. Optical transmittance and electrical sheet resistance of CIGS thin films have been found to decrease with decrease of working pressure. The results of the present study signify that desired structural, electrical and optical properties of CIGS thin films can be obtained by changing the processing parameter in PLD method.Keywords: CIGS, XRD, Stoichiometry, UV-Vis-NIR spectrophotometer.


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