scholarly journals A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Dixian Zhao ◽  
Yongran Yi
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
Fully Integrated ◽  
Band Power ◽  
Zero Degree ◽  
Overall Performance ◽  
Point To Point ◽  
Device Size

This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.

Failure Localization in a Multistage S-Band Power Amplifier

2016 ◽  
Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Fault Tree ◽  
Root Cause ◽  
Failure Investigation ◽  
Band Power ◽  
Cause Of Failure ◽  
Design Materials ◽  
Board Level ◽  
Failure Localization

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.

A compact H-band Power Amplifier with High Output Power

2021 ◽  
Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Output Power ◽  
Band Power ◽  
High Output

Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

2006 ◽  
Vol 42 (22) ◽  
pp. 1286 ◽  
Author(s):  
M. Hirata ◽  
T. Oka ◽  
M. Hasegawa ◽  
Y. Amano ◽  
Y. Ishimaru ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Broadband Wireless ◽  
Fully Integrated ◽  
Wireless Applications

A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Circuit World ◽  
2019 ◽  
Vol 46 (1) ◽  
pp. 1-5
Author(s):  
Yanfeng Fang ◽  
Yijiang Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Input Power ◽  
Content Type ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Peak Output Power ◽  
Saturated Output Power ◽  
Direct Input ◽  
Matching Techniques

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

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