scholarly journals Study on the Stability of Unpackaged CdS/CdTe Solar Cells with Different Structures

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Guanggen Zeng ◽  
Xiaolan Liu ◽  
Yubo Zhao ◽  
Yuanmao Shi ◽  
Bing Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Cycling ◽  
Thermal Aging ◽  
Short Circuit ◽  
Temperature Cycling ◽  
International Electrotechnical Commission ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Before And After ◽  
The Stability

In this work, the stability of unpackaged CdTe solar cells with different configurations was investigated according to the International Electrotechnical Commission IEC 61215-2016. The measurements of thermal cycling from -40°C to +85°C and 24-hour temperature cycling from -40°C to +85°C withstanding the effects of 20-hour penetration of 85°C were carried out in CdS/CdTe solar cells with structures of FTO/CdS/CdTe/Au, FTO/CdS/CdTe/back contact/Au, and FTO/MZO/CdS/CdTe/back contact/Au, respectively. The performances of these cells before and after the thermal aging experiments were investigated by using light and dark I‐V together with C‐V. The results reveal varied performance degradation before and after thermal aging in the cells with different structures. Among these, the most deteriorated device is the one without back contact (BC), whose efficiency decreased by 25.12% after thermal cycling accompanying an obvious roll-over phenomenon when forward bias was greater than open circuit voltage. On the contrary, the reduction in the efficiency was about 16.80% in the case cells with BC, and the roll-over phenomenon was not so significant. Furthermore, for the devices with optimized front contact of FTO/MZO, the thermal stability was improved obviously. Interestingly, short-circuit current density associated with the carrier concentration of cells remained relatively small variations compared with the change of Voc and fill factor. All the results indicated that an efficient back contact layer and an optimized front electrode were the indispensable structural elements to attain high stabilization in the CdS/CdTe solar cells.

scholarly journals CuSCN as the Back Contact for Efficient ZMO/CdTe Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1991
Author(s):  
Deng-Bing Li ◽  
Zhaoning Song ◽  
Sandip S. Bista ◽  
Fadhil K. Alfadhili ◽  
Rasha A. Awni ◽  
...  
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Power Conversion ◽  
Open Circuit ◽  
Full Potential ◽  
Back Contact ◽  
Cdte Solar Cells

The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasitic light absorption by the buffer layer. However, due to the atmosphere sensitivity of ZMO film, the post treatments of ZMO/CdTe stacks, including CdCl2 treatment, back contact deposition, etc., which are critical for high-performance CdTe solar cells became crucial challenges. To realize the full potential of the ZMO buffer layer, plenty of investigations need to be accomplished. Here, copper thiocyanate (CuSCN) is demonstrated to be a suitable back-contact material with multi-advantages for ZMO/CdTe solar cells. Particularly, ammonium hydroxide as the solvent for CuSCN deposition shows no detrimental impact on the ZMO layer during the post heat treatment. The post annealing temperature as well as the thickness of CuSCN films are investigated. Finally, a champion power conversion efficiency of 16.7% is achieved with an open-circuit voltage of 0.857 V, a short-circuit current density of 26.2 mA/cm2, and a fill factor of 74.0%.

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

Synthesis of high-quality ZnTe:Cu films as a back contact layer for CdTe solar cells

2021 ◽  
Author(s):  
Xinlu Lin ◽  
Yufeng Zhang ◽  
Ziyao Zhu ◽  
Qiuchen Wu ◽  
Xiangxin Liu
Keyword(s):  
Solar Cells ◽  
Contact Layer ◽  
Back Contact ◽  
High Quality ◽  
Cdte Solar Cells

scholarly journals Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

AIP Advances ◽  
2011 ◽  
Vol 1 (4) ◽  
pp. 042152 ◽  
Author(s):  
Songbai Hu ◽  
Zhe Zhu ◽  
Wei Li ◽  
Lianghuan Feng ◽  
Lili Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
And Performance

scholarly journals Optical Losses of Frontal Layers in Superstrate CdS/CdTe Solar Cells Using OPAL2

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 943
Author(s):  
Nowshad Amin ◽  
Mohammad Rezaul Karim ◽  
Zeid Abdullah ALOthman
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Contact Potential Difference ◽  
Short Circuit Current ◽  
Optical Losses ◽  
Contact Potential ◽  
Conducting Oxides ◽  
Cdte Solar Cells ◽  
First Time ◽  
Defect Densities

In this paper, optical losses in CdS/CdTe solar cells are calculated on the basis of the designated reflective index of various frontal layers using an OPAL2 calculator for the first time. Two types of glass (0.1 mm ultra-thin Schott and 1.1 mm standard borosilicate glass) were assumed to be coated by different Transparent-Conducting-Oxides (TCOs) such as SnO2:F, ZnO:Al, and ITO forming frontal layers for CdS/CdTe solar cells in superstrate configuration. Absorption, reflectance, transmittance, and consequently optical bandgap energies are calculated as a function of common thicknesses, used in the literature. The results show that an increase in TCO thickness led to a decrease in optical band gap as well as an enhancement in contact potential difference, which can deteriorate device performance. The optimum thickness of 100 nm for SnO2:F was calculated, while 200 nm for ZnO:Al and ITO show reasonable optical losses caused by reflections at the interfaces’ and the layer’s absorption. It is seen that 80 to 150 nm CdS on ITO might be an effective range to satisfy a high short circuit current and low defect densities at the CdS/CdTe interface. Finally, a minimum 2 μm thickness for the CdTe on the ultra-thin Schott glass coated by optimum layers can result in the highest short circuit current of 28.69 mA/cm2. This work offers a practical equivalent strategy to be applied for any superstrate solar cells containing TCO and CdS frontal layers.

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