scholarly journals Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

2017 ◽  
Vol 7 (6) ◽  
pp. 3002
Author(s):  
W.M. Jubadi ◽  
F. Packeer ◽  
M. Missous
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Equivalent Model ◽  
High Electron ◽  
Large Signal ◽  
Active Device ◽  
Empirical Modelling ◽  
Noise Amplifier ◽  
Highly Strained

<span>An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.</span>

An ultra-low noise pseudomorphic high electron mobility transistor (pHEMT)-based low noise amplifier using low temperature co-fire ceramic (LTCC) technique

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Bhuvaneshwari Subburaman ◽  
Kanthamani Sundharajan
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
High Electron Mobility ◽  
Content Type ◽  
Noise Amplifier

Purpose This study aims to present two stage pseudomorphic high electron mobility transistor-based low noise amplifier (LNA) designed using low temperature co-fire ceramic (LTCC) technique for ultra-high frequency (UHF) band. The LNA operates in the frequency range of (400∼500) MHz which is suitable for wireless communication applications. Design/methodology/approach This LNA uses resistive capacitive (RC) feedback in the first stage to have wide bandwidth and interstage network for gain enhancement. By using external RC feedback, stability is improved and noise matching in the input stage is isolated by decoupling inductor. The excellent performance parameters including gain, noise figure (NF), wideband and linearity are attained without affecting the power consumption, compactness and cost of the proposed design. Findings Simulation is carried out using advanced design software and the result shows that gain of 33.7 dB, NF 0.416 dB and 1 dB compression point (P1dB) of 18.59 dBm are achieved with a supply voltage of 2.5 V. The return loss of input and output are −19.3 dB and −10.5 dB, respectively. From the above aforementioned parameters, it is confirmed that the proposed LNA is a promising candidate for receivers where high gain and very low NF are always demandable with good linearity for applications operating in the UHF band. Originality/value The innovation of the proposed LNA is that the concurrent attainment of high gain, low NF, wideband, optimum input matching, good stability by RC feedback and interstage network using LTCC technique to achieve robustness, low cost and compactness to prove the applicability of design for wireless applications.

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

scholarly journals Single Stage 180nm CMOS Low Noise Amplifier Topologies and Optimization Algorithms for S Band Frequency

2019 ◽  
Vol 8 (3) ◽  
pp. 152-157 ◽  
Keyword(s):  
Noise Figure ◽  
Optimization Algorithms ◽  
Satellite System ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Active Device ◽  
Band Frequency ◽  
Noise Amplifier

Low Noise Amplifier (LNA) plays an important role in radio receivers. It mainly determines the system noise and intermodulation behavior of overall receiver. LNA design is more challenging as it requires high gain, low noise figure, good input and output matching and unconditional stability. Further, designing a Low noise Amplifier requires active device selection, amplifier topology, optimization algorithms for superlative results. Hence this paper presents performance analysis of CMOS LNA based on different topologies and optimization algorithms for 180nm RF CMOS design in S band frequency. Here the best results, various limitations in each topology are reviewed and required specifications are determined in each designing. Further this best topology is used for designing LNA circuit which could be used in Indian Regional Navigation Satellite System (IRNSS) applications in dual band frequency.

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