A wideband cryogenic microwave low-noise amplifier
Keyword(s):
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
2011 ◽
Vol 54
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pp. 329-332
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pp. 1208
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2017 ◽
Vol 7
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pp. 176
2018 ◽
Vol 28
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pp. e21425
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2016 ◽
Vol 11
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pp. 28-34
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2014 ◽
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pp. 215-223
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Vol 7
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pp. 3002