pH Sensing Characteristics of Silicon on Insulator (SOI) Junctionless (JL) Ion-Sensitive Field-Effect Transistor

Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

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pH Sensing Characteristics of Extended-Gate Field-Effect Transistor with Al2O3 Layer

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2019.17093 ◽

2019 ◽

Vol 19 (10) ◽

pp. 6682-6686 ◽

Cited By ~ 1

Author(s):

Jae Kwon ◽

Yong Kyoung Yoo ◽

Jeong Hoon Lee ◽

Jae-Hyuk Ahn

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ph Sensing ◽

Al2o3 Layer ◽

Effect Transistor ◽

Sensing Characteristics

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The pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Base on The Electrode with Copper Oxide Nanowires

ECS Meeting Abstracts ◽

10.1149/ma2012-02/56/3873 ◽

2012 ◽

Keyword(s):

Copper Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Ph Sensing ◽

Oxide Nanowires ◽

Effect Transistor ◽

Sensing Characteristics

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Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽

10.3390/s21124213 ◽

2021 ◽

Vol 21 (12) ◽

pp. 4213

Author(s):

Seong-Kun Cho ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Silicon On Insulator ◽

Sodium Ion ◽

Ion Sensor ◽

Highly Sensitive ◽

Selective Membrane ◽

Dual Gate ◽

Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

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