scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

2012 ◽  
Vol 41 (5) ◽  
pp. 310-313 ◽  
Author(s):  
D. E. Presnov ◽  
S. V. Amitonov ◽  
V. A. Krupenin

2013 ◽  
Vol 4 ◽  
pp. 330-335 ◽  
Author(s):  
Denis E Presnov ◽  
Sergey V Amitonov ◽  
Pavel A Krutitskii ◽  
Valentina V Kolybasova ◽  
Igor A Devyatov ◽  
...  

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.


2014 ◽  
Vol 50 (31) ◽  
pp. 4112-4114
Author(s):  
Kyeong-Ju Moon ◽  
Tae Il Lee ◽  
Sang-Hoon Lee ◽  
Jae-Min Myoung

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device.


1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker

Sign in / Sign up

Export Citation Format

Share Document