Effect of Nanoparticle Nature on Hydrogen Concentration Profiles and Improved Switching Characteristics in Gd Switchable Mirrors

2005 ◽  
Vol 5 (10) ◽  
pp. 1728-1733 ◽  
Author(s):  
I. Aruna ◽  
B. R. Mehta ◽  
L. K. Malhotra ◽  
S. A. Khan ◽  
D. K. Avasthi
Keyword(s):  
Hydrogen Concentration ◽  
Concentration Profiles ◽  
Switching Characteristics

Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity

2007 ◽  
Vol 131-133 ◽  
pp. 425-430 ◽  
Author(s):  
Anis M. Saad ◽  
Oleg Velichko ◽  
Yu P. Shaman ◽  
Adam Barcz ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Transport Processes ◽  
Concentration Profiles ◽  
Hydrogen Transport ◽  
Hydrogen Atoms ◽  
Near Surface ◽  
Type Conductivity ◽  
Hydrogen Molecules

The silicon substrates were hydrogenated at approximately room temperature and hydrogen concentration profiles vs. depth have been measured by SIMS. Czochralski grown (CZ) wafers, both n- and p-type conductivity, were used in the experiments under consideration. For analysis of hydrogen transport processes and quasichemical reactions the model of hydrogen atoms diffusion and quasichemical reactions is proposed and the set of equations is obtained. The developed model takes into account the formation of bound hydrogen in the near surface region, hydrogen transport as a result of diffusion of hydrogen molecules 2 H , diffusion of metastable complexes * 2 H and diffusion of nonequilibrium hydrogen atoms. Interaction of 2 H with oxygen atoms and formation of immobile complexes “oxygen atom - hydrogen molecule” (O - H2 ) is also taken into account to explain the hydrogen concentration profiles in the substrates of n-type conductivity. The computer simulation based on the proposed equations has shown a good agreement of the calculated hydrogen profiles with the experimental data and has allowed receiving a value of the hydrogen molecules diffusivity at room temperature.

scholarly journals Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond

1991 ◽  
Vol 58 (6) ◽  
pp. 571-573 ◽  
Author(s):  
L. Schäfer ◽  
C.‐P. Klages ◽  
U. Meier ◽  
K. Kohse‐Höinghaus
Keyword(s):  
Chemical Vapor Deposition ◽  
Hydrogen Concentration ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Chemical Vapor ◽  
Concentration Profiles

Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films

1988 ◽  
Vol 53 (21) ◽  
pp. 2036-2038 ◽  
Author(s):  
Joseph Z. Xie ◽  
Shyam P. Murarka ◽  
Xin S. Guo ◽  
William A. Lanford
Keyword(s):  
Silicon Dioxide ◽  
Hydrogen Concentration ◽  
Concentration Profiles ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Phosphorus Doped

Hydrogen concentration profiles and chemical bonding in silicon nitride

1979 ◽  
Vol 8 (1) ◽  
pp. 11-24 ◽  
Author(s):  
P. S. Peercy ◽  
H. J. Stein ◽  
B. L. Doyle ◽  
S. T. Picraux ◽  
Sandia Laboratoriest
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Concentration ◽  
Chemical Bonding ◽  
Concentration Profiles
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