A Simple Route to Ultra Long SiC Nanowires
2007 ◽
Vol 7
(2)
◽
pp. 580-583
◽
Keyword(s):
SiC nanowires are prepared by pyrolysis of hexamethyldisilane (HMDS), at 1200 °C in a flowing Ar atmosphere. The length of the nanowires is in millimeter scale. Transmission electron microscopy observations indicate that the diameters of the SiC nanowires are in the range of about 8 to 120 nm, and that most of the nanowires have numerous stacking faults. The formation mechanism of the nanowires is proposed.
2016 ◽
Vol 858
◽
pp. 105-108
◽
1957 ◽
Vol 240
(1223)
◽
pp. 524-538
◽
1992 ◽
Vol 65
(6)
◽
pp. 1383-1394
◽
2008 ◽
Vol 600-603
◽
pp. 67-70
◽
2008 ◽
Vol 8
(7)
◽
pp. 3504-3510
◽
2008 ◽
Vol 41-42
◽
pp. 15-19
◽