Effect of Spray Process Conditions on Uniformity of Carbon Nanotube Thin Films

2012 ◽  
Vol 12 (7) ◽  
pp. 5290-5296 ◽  
Author(s):  
Du Soon Choi ◽  
Duckjong Kim ◽  
Yong-Pil Kang ◽  
Dong Hwan Jang
2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui

ACS Omega ◽  
2021 ◽  
Vol 6 (4) ◽  
pp. 2665-2674
Author(s):  
Bijoy Chandra Ghos ◽  
Syed Farid Uddin Farhad ◽  
Md Abdul Majed Patwary ◽  
Shanta Majumder ◽  
Md. Alauddin Hossain ◽  
...  

2016 ◽  
Vol 120 (30) ◽  
pp. 17069-17080 ◽  
Author(s):  
Randy D. Mehlenbacher ◽  
Thomas J. McDonough ◽  
Nicholas M. Kearns ◽  
Matthew J. Shea ◽  
Yongho Joo ◽  
...  

2009 ◽  
Vol 165 (3) ◽  
pp. 135-138 ◽  
Author(s):  
Zdenko Špitalský ◽  
Christos Aggelopoulos ◽  
Georgia Tsoukleri ◽  
Christos Tsakiroglou ◽  
John Parthenios ◽  
...  

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.


2021 ◽  
pp. 2100953
Author(s):  
Manabu Ishizaki ◽  
Daiki Satoh ◽  
Rin Ando ◽  
Mikuto Funabe ◽  
Jun Matsui ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document