Electroless Nickel Alloy Deposition on SiO<SUB>2</SUB> for Application as a Diffusion Barrier and Seed Layer in 3D Copper Interconnect Technology

ABSTRACTWe demonstrate the extendibility of the Cu damascene process to 0.1 μm wide lines. Cu interconnects, 0.1 - 1 μm wide, were fabricated by a damascene process that produced planarized lines and vias, imbedded in insulators. This process was defined by 1) trench and via formation in blanket dielectrics using e-beam lithography and reactive ion etching, 2) trench fill using a series of metal depositions, and 3) chemical mechanical polishing to remove the field metals. Physical vapor and ionized physical vapor deposition techniques were used to deposit the adhesion/diffusion barrier liner and the Cu seed layer, respectively. The main Cu conductor was deposited by an electroplating method. The width of lines and vias were varied from 0.1 μm to 1 μm while the thicknesses were held constant at 0.45 μm. A near bamboo-like structure was observed in the sub-μm wide lines. The effective resistivity of the Cu lines was found to be about 2.3 μΩ-cm and was independent of width after annealing at 400 °C.

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Influence of Al2O3 diffusion barrier and PbTiO3 seed layer on microstructural and ferroelectric characteristics of PZT thin films by sol-gel spin coating method

Thin Solid Films ◽

10.1016/s0040-6090(97)00034-5 ◽

1997 ◽

Vol 305 (1-2) ◽

pp. 321-326 ◽

Cited By ~ 34

Author(s):

Seung-Hyun Kim ◽

Chang-Eun Kim ◽

Young-Jei Oh

Keyword(s):

Thin Films ◽

Diffusion Barrier ◽

Spin Coating ◽

Seed Layer ◽

Sol Gel ◽

Pzt Thin Films ◽

Spin Coating Method ◽

Coating Method

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Effect of the Electroless Nickel, Electroless Palladium, and Immersion Gold Multilayer as a Diffusion Barrier on the Bonding Strength of BiTe-Based Thermoelectric Modules

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19431 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4498-4502

Author(s):

Yen Ngoc Nguyen ◽

Khanh Quoc Dang ◽

Injoon Son

Keyword(s):

Intermetallic Compounds ◽

Electrochemical Deposition ◽

Barrier Layer ◽

Diffusion Barrier ◽

Bonding Strength ◽

Effective Diffusion ◽

Electroless Nickel ◽

Thermoelectric Modules ◽

Diffusion Barrier Layer ◽

Plating Layer

An effective diffusion barrier layer was coated onto the surface of BiTe-based materials to avoid the formation of brittle intermetallic compounds (IMCs) by the diffusion of the constituents of Sn-based solder alloys into the BiTe-based alloys. In this study, the electrochemical deposition of multi-layers, i.e., electroless nickel/electroless palladium/immersion gold (ENEPIG) was explored to enhance the bonding strength of BiTe materials with Cu electrodes. The thermoelectric modules with the ENEPIG plating layer exhibited high bonding strengths of 8.96 MPa and 7.28 MPa for the n- and p-type, respectively that increased slightly to 9.26 MPa and 7.76 MPa, respectively after the thermoelectric modules were heated at 200 °C for 200 h. These bonding strengths were significantly higher than that of the thermoelectric modules without a plating layer.

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