Mechanical and Electrical Reliability Analysis of Flexible Si Complementary Metal-Oxide-Semiconductor Integrated Circuit

2019 ◽  
Vol 19 (10) ◽  
pp. 6473-6480
Author(s):  
Seungyoon Kim ◽  
Cheolgyu Kim ◽  
Jae Hoon Bong ◽  
Wan Sik Hwang ◽  
Taek-Soo Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Reliability Analysis ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Reliability

scholarly journals Design and Characteristics of CMOS Inverter based on Multisim and Cadence

2021 ◽  
Vol 2108 (1) ◽  
pp. 012034
Author(s):  
Haoran Xu ◽  
Jianghua Ding ◽  
Jian Dang
Keyword(s):  
Metal Oxide ◽  
Analog Circuits ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Data Converters ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Inverter ◽  
And Performance

Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for various types of communications. Based on multisim 14.0 and cadence, the characteristics and performance of CMOS inverter are studied by simulation.

Fabrication of microbridges in standard complementary metal oxide semiconductor technology

1989 ◽  
Vol 67 (4) ◽  
pp. 184-189 ◽  
Author(s):  
M. Parameswaran ◽  
Lj. Ristic ◽  
A. C. Dhaded ◽  
H. P. Baltes ◽  
W. Allegretto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Layout Design ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Digital Cmos ◽  
Sensor Applications

Complementary metal oxide semiconductor (CMOS) technology is one of the leading fabrication technologies of the semiconductor integrated-circuit industry. We have discovered features inherent in the standard CMOS fabrication process that lend themselves to the manufacturing of micromechanical structures for sensor applications. In this paper we present an unconventional layout design methodology that allows us to exploit the standard CMOS process for producing microbridges. Two types of microbridges, bare polysilicon microbridges and sandwiched oxide microbridges, have been manufactured by first implementing a special layout design in an industrial digital CMOS process, followed by a postprocessing etching step.

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