Annealing Behaviors of Al and Al–Mg–Si Alloy: A Real-Time Synchrotron X-ray Scattering Study

2021 ◽  
Vol 21 (3) ◽  
pp. 2046-2050
Author(s):  
Nan-Nan Liang ◽  
Sae-Heum Park ◽  
Tae-Sik Cho ◽  
Seong-Goo Han

We have studied the annealing behaviors of pure Al (Al-1050) and Al–Mg–Si alloy (Al-6061) with plate-type using a real-time synchrotron X-ray scattering in vacuum. At room temperature (RT), the crystal domain size of Al phase in the Al–Mg–Si alloy was small as 70 nm, compared to that in the pure Al, 142 nm. The crystal Al phase in the Al–Mg–Si alloy has more thermal stability than that in the pure Al. The crystal Al phase in the Al–Mg–Si alloy was thermally stable in amount and size up to 250 °C. These are due to the existence of intermetallic crystal Mg2Si phase, which is thermally stable in amount and size up to 250 °C.

1999 ◽  
Vol 590 ◽  
Author(s):  
H. C. Kang ◽  
S. H. Seo ◽  
D. Y. Noh

ABSTRACTWe present an x-ray scattering study of the oxidation of AIN/sapphire films into λ-A12O3 upon annealing. Epitaxial AIN/Sapphire(0001) transforms into nano-crystalline epitaxial λ-A12O3 during annealing at temperatures above 800°C in air. The crystalline orientational relation between the λ-Al2O3 and AIN are < 111 > // < 0001 > in the film normal direction, and < 110 > // < 1120 > in the film plane direction. The domain size of the spinel λ-A1203 crystalline is smaller than 50 Å in both out-of-plane and in-plane directions. The XPS depth profiles of the oxide film showed that the film is composed of aluminum and oxygen, and the atomic concentration ratio is about 2:3.


2004 ◽  
Vol 22 (5) ◽  
pp. 2159-2162 ◽  
Author(s):  
I. W. Kim ◽  
Y. B. Kwon ◽  
J. M. Yi ◽  
J. H. Je ◽  
G. Nouet ◽  
...  

1999 ◽  
Vol 35 (5) ◽  
pp. 2778-2780 ◽  
Author(s):  
Tae Sik Cho ◽  
Seok Joo Doh ◽  
Jung Ho Je ◽  
Do Young Noh ◽  
Tak Jean Moon

1995 ◽  
Vol 28 (19) ◽  
pp. 6383-6393 ◽  
Author(s):  
Michael F. Butler ◽  
Athene M. Donald ◽  
Wim Bras ◽  
Geoffrey R. Mant ◽  
Gareth E. Derbyshire ◽  
...  

1991 ◽  
Vol 41 (1-2) ◽  
pp. 269
Author(s):  
T.A. Ezquerra ◽  
E. Lopez-Cabarcos ◽  
F.J. Baltà-Calleja ◽  
J.D. Stenger-Smith ◽  
R.W. Lenz

2002 ◽  
Vol 749 ◽  
Author(s):  
Hsin-Yi Lee ◽  
C.-H. Hsu ◽  
Y.-W. Hsieh ◽  
K. S. Liang

ABSTRACTThe real-time x-ray scattering measurements under in-situ sputtering conditions were employed to study the growth behavior of sputter-deposited SrTiO3 films on SrTiO3 (001) substrate. A condition for conformal growth between deposited layers and substrate was found by observing the oscillation fringe in the diffuse scattering of measured reflectivity. The azimuthal scan around surface Bragg peak of the film peak shows that the epitaxial relationship between film and substrate can be achieved by sputtering.


Sign in / Sign up

Export Citation Format

Share Document