Spatially Resolved In Situ Diagnostics for Plasma-Enhanced Chemical Vapor Deposition Carbon Film Growth

2012 ◽  
Vol 7 (1) ◽  
pp. 90-94 ◽  
Author(s):  
Rinat R. Ismagilov ◽  
Aleksey A. Zolotukhin ◽  
Petr V. Shvets ◽  
Alexander N. Obraztsov
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Spatially Resolved

Effect of Sub-Micron Thin Film on Surface Temperature During Chemical Vapor Deposition

2005 ◽  
Author(s):  
Wei Huang ◽  
Weixue Tian ◽  
Wilson K. S. Chiu
Keyword(s):  
Heat Transfer ◽  
Chemical Vapor Deposition ◽  
Optical Fiber ◽  
Vapor Deposition ◽  
Film Growth ◽  
Radiation Heat Transfer ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Operating Conditions ◽  
Effective Emissivity

In this paper, we investigated the effect of the film thickness on heat transfer and subsequent film temperature distribution of an optical fiber as it traverses through a chemical vapor deposition (CVD) reactor. A 50 nm thick carbon coating is applied on the optical fiber as it moves through the CVD reactor. In this process, the only heat source is the hot optical fiber entering the CVD reactor from the draw furnace. Radiation heat transfer from the optical fiber as it is being coated plays an important role during CVD carbon film growth. The carbon film will change the effective emissivity of the optical fiber as it traverses through the CVD reactor. This study will calculate the effective emissivity of this film-fiber structure based on wave theory, and evaluate the optical fiber’s resulting temperature field and rate of heat transfer loss during chemical vapor deposition. Results are correlated to operating conditions.

Microstructure of Carbon Film Deposited Using Hot-Filament Chemical Vapor Deposition

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Hot Filament

Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

2017 ◽  
Vol 409 ◽  
pp. 261-269 ◽  
Author(s):  
Ai-Min Wu ◽  
Chen-Chen Feng ◽  
Hao Huang ◽  
Ramon Alberto Paredes Camacho ◽  
Song Gao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Porous Carbon ◽  
Microwave Plasma ◽  
Carbon Film ◽  
Chemical Vapor

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

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