Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

ABSTRACTThe initial stages of bias-enhanced chemical vapor deposition (CVD) of diamond were investigated in a microwave-plasma system. Samples were characterized with TEM and concurrent electron energy loss spectroscopy (EELS) to characterize chemical bonding in the deposited material. The results show that a thin amorphous carbon film is deposited during biasing, and that diamond nucleation occurs on this amorphous film. Isolated regions of crystalline SiC within the amorphous layer were also observed at longer bias times. These regions apparently form by a reaction between the amorphous carbon layer and the silicon substrate.

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The Effect of Depositing Time on the MPCVD of Diamond on Porous Carbon Monolith

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.306-307.1761 ◽

2011 ◽

Vol 306-307 ◽

pp. 1761-1766

Author(s):

Qian Mei ◽

Xiao Jiao Yu ◽

Bin Yuan Zhao ◽

Rong Bin Li ◽

Yi Jian Lay ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Small Molecules ◽

Vapor Deposition ◽

Porous Carbon ◽

Microwave Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Carbon Monolith ◽

Carbon Resource

Porous carbon monolith was used as substrate for microwave plasma chemical vapor deposition. The depositing time was set as 1 hour, 3hours, and 5 hours respectively. The deposited samples were characterized with Raman spectroscope and scanning electron microscope. It was proved that diamond was formed on the surface of all the samples. However, the surface morphology and phase composition of the chemical vapor deposition layer changed with depositing time. It was deduced that the porous carbon monolith was a carbon resource, and it gave out small molecules containing carbon element during the deposition. This changed the ratio of carbon to hydrogen in the growing atmosphere, and correspondingly influenced the growth of carbon on the substrate. With a low ratio of carbon to hydrogen, mainly diamond grew. Or else, other types of carbon would grow on the surface of the porous carbon monolith substrate.

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Growth of (110)-oriented diamond films by electron-assisted chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.1993.0314 ◽

1993 ◽

Vol 8 (2) ◽

pp. 314-320 ◽

Cited By ~ 9

Author(s):

Kazuo Kumagai ◽

Koichi Miyata ◽

Kozo Nishimura ◽

Koji Kobashi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Etching Rate ◽

Carbon Film ◽

Diamond Films ◽

Chemical Species ◽

Chemical Vapor ◽

Growth Conditions ◽

Nucleation Density

Diamond films were deposited on Si substrates by Electron-Assisted Chemical Vapor Deposition (EACVD) using various methane concentrations below 8.1%. It was found that the deposited films were strongly (110)-oriented. This seemed to arise from a high nucleation density of diamond caused by the initial deposition of an amorphous carbon film. A comparison of the graphite etching rate between EACVD and Microwave Plasma CVD (MPCVD) under the standard growth conditions showed that EACVD was able to etch graphite about five times faster than MPCVD. Hence, it was concluded that the differences in the growth rate and morphology between EACVD and MPCVD arise from the different graphite etching rates as well as different chemical species in the reaction gas.

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