Nitrogen Ion Implantation Effect on Silicon Solar Cells for Surface Passivation

2018 ◽  
Vol 13 (10) ◽  
pp. 1591-1597
Author(s):  
Rajkumar Sahu ◽  
Srikanta Palei ◽  
Jaeho Choi ◽  
Keunjoo Kim
Keyword(s):  
Ion Implantation ◽  
Conversion Efficiency ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Nitrogen Ion Implantation ◽  
Cell Conversion ◽  
Nitrogen Ion

We investigated the surface passivation of silicon solar cells by nitrogen ion implantation. The nitrogen ion was implanted with the energy of 20 keV at a twist angle of 22.5° from the Si 〈100〉 direction and a tilt angle of 7°. The ion concentration was varied at 1013, 1014, and 1015 N+/cm2. The implanted cell showed the implanted region located below the anti-reflection coating layer. For the low dose cell of 1013 N+/cm2, the nitrogen ion implantation showed increased quantum efficiency, minority carrier lifetime, and conversion efficiency compared to the reference cell. However, as the ion dose was increased, the quantum efficiency, minority carrier lifetime, photoreflectance, and cell conversion efficiency of the fabricated cell decreased. This indicates that nitrogen ion implantation can passivate the surface to increase the cell conversion efficiency with a critical dose of ions.

Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime

1991 ◽  
Vol 30 (Part 2, No. 6A) ◽  
pp. L1025-L1027 ◽  
Author(s):  
Gen Washidzu ◽  
Tohru Hara ◽  
Ryuji Ichikawa ◽  
Hiroyuki Takamatsu ◽  
Shingo Sumie ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Influence of surface passivation on the minority carrier lifetime, Fe-B pair density and recombination center concentration

2010 ◽  
Vol 55 (17) ◽  
pp. 1828-1833 ◽  
Author(s):  
Feng Li ◽  
ZhongQuan Ma ◽  
XiaJie Meng ◽  
Peng Lü ◽  
ZhengShan Yu ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recombination Center ◽  
Pair Density

Improvement of minority carrier lifetime and conversion efficiency by Na incorporation in Cu2ZnSnSe4 solar cells

2017 ◽  
Vol 122 (2) ◽  
pp. 023106 ◽  
Author(s):  
Hitoshi Tampo ◽  
Kang Min Kim ◽  
Shinho Kim ◽  
Hajime Shibata ◽  
Shigeru Niki
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

2014 ◽  
Vol 936 ◽  
pp. 603-606
Author(s):  
Yin Wang ◽  
Wei Li ◽  
An Ran Guo ◽  
Feng Yu ◽  
Jian He ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

Atomic Structure of Light-Induced Efficiency-Degrading Defect in Boron-doped Czochralski Silicon Solar Cells

2021 ◽  
Author(s):  
Abigail Rose Meyer ◽  
Craig P Taylor ◽  
Michael Venuti ◽  
Serena Eley ◽  
Vincenzo LaSalvia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Structure ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Light Exposure ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Boron Doped

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...

The Effect of Substrate Surface Condition on Atomic Layer Deposited Alumina Passivation Films

2016 ◽  
Vol 703 ◽  
pp. 230-234
Author(s):  
Yu Ren Xiang ◽  
Chun Lan Zhou ◽  
Wen Jing Wang
Keyword(s):  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Substrate Surface ◽  
Surface Condition ◽  
Minority Carrier Lifetime ◽  
Atomic Layer ◽  
Silicon Surfaces ◽  
Environment Analysis ◽  
Surface Conditions

Aluminum oxide (Al2O3) films have been wildly investigated due to the excellent surface passivation for the electrical device. Both hydrogen-terminated and pre-oxidized silicon surfaces were prepared before Al2O3 films deposition. Combining chemical environment analysis with the effective minority lifetime data, the effect of the surface conditions on the Al2O3 films passivation was discussed. The HF sample with hydrogen-terminated substrate surface had a higher minority carrier lifetime (about 721 μs) than the H2SO4+H2O2 sample with pre-oxidized substrate surface (about 631 μs). The H atoms played an important role in improving the passivation effect. And the importance of the interfacial oxide layer to Al2O3 films passivation was validated too.

Sign in / Sign up

Export Citation Format

Share Document