Ultra-Low Power Successive Approximation Analog-to-Digital Converter Using Emerging Tunnel Field Effect Transistor Technology

2016 ◽  
Vol 12 (3) ◽  
pp. 218-226 ◽  
Author(s):  
Jie Lin ◽  
Jiann-Shiun Yuan
RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.


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