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Low Temperature Post-Annealing of ZnO Thin-Film Transistors with High-k Gate Dielectrics
ECS Transactions
◽
10.1149/1.2980569
◽
2019
◽
Vol 16
(9)
◽
pp. 315-322
◽
Cited By ~ 1
Author(s):
Henry J. H. Chen
◽
Barry B. Yeh
◽
Wei-Yang Chou
Keyword(s):
Thin Film
◽
Low Temperature
◽
Thin Film Transistors
◽
Gate Dielectrics
◽
Zno Thin Film
◽
Post Annealing
◽
High K
Download Full-text
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◽
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◽
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◽
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Low Temperature Post-Annealing of ZnO Thin-Film Transistors with HfO2 Gate Dielectrics
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◽
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◽
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◽
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Low temperature fabrication of high performance ZnO thin film transistors with high-k dielectrics
Solid-State Electronics
◽
10.1016/j.sse.2015.05.004
◽
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◽
Vol 111
◽
pp. 58-61
◽
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Author(s):
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◽
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◽
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In-plane-gate flexible single-crystalline silicon thin-film transistors with high-k gate dielectrics on plastic substrates
AIP Advances
◽
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◽
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◽
Vol 9
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◽
pp. 015111
◽
Cited By ~ 1
Author(s):
Yibo Zhang
◽
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◽
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◽
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◽
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◽
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◽
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Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2
IEEE Electron Device Letters
◽
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Low-temperature solution-processed high-k ZrTiOx dielectric films for high-performance organic thin film transistors
Synthetic Metals
◽
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◽
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◽
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◽
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Low-Voltage Organic Thin-Film Transistors with High-k Nanocomposite Gate Dielectrics for Flexible Electronics and Optothermal Sensors
Advanced Materials
◽
10.1002/adma.200700831
◽
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◽
Vol 19
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◽
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◽
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Author(s):
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature
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◽
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◽
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◽
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◽
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◽
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◽
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Rapid and facile low-temperature solution production of ZrO2 films as high-k dielectrics for flexible low-voltage thin-film transistors
Ceramics International
◽
10.1016/j.ceramint.2019.05.181
◽
2019
◽
Vol 45
(13)
◽
pp. 16482-16488
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Cited By ~ 6
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Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis
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