On Analysis of Mass Transport to Formulate Conditions for Increasing Integration Rate of Elements Framework Current Comparator in Sensor Applications. An Approach to Optimize of Technological Process

2020 ◽  
Vol 18 (6) ◽  
pp. 493-509
Author(s):  
E. L. Pankratov
Keyword(s):  
Integrated Circuits ◽  
Temporal Variation ◽  
Heat Transport ◽  
Analytical Approach ◽  
Spatial And Temporal Variation ◽  
Multilayer Structures ◽  
Current Comparator ◽  
Sensor Applications ◽  
Variation Of Parameters ◽  
A Current

Framework the paper we consider an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account nonlinearity of processes. The approach gives a possibility to analyze mass and heat transport in multilayer structures without crosslinking of solutions on interfaces between layers. The approach also gives a possibility to take into account spatial and temporal variation of parameters of considered processes. Based on this approach we analyzed manufacturing a current comparator for sensor applications to increase density of elements.

scholarly journals On optimization of manufacturing of a step-down DC-DC converter to increase integration density of elements

2021 ◽  
Vol 10 (2) ◽  
pp. 122
Author(s):  
E. L. Pankratov
Keyword(s):  
Spatial Variation ◽  
Temporal Variation ◽  
Field Effect ◽  
Analytical Approach ◽  
Multilayer Structures ◽  
Heat And Mass Transport ◽  
Variation Of Parameters ◽  
Induced Stress ◽  
Integration Density ◽  
Step Down

<p>We consider possibility to increase field-effect transistor's density in a switched-capacitor step-down DC-DC converter. Based on this approach we analyzed manufacturing of the converter in a heterostructure with special structure. Some specific sections of the heterostructure must be doped by ion implantation or by diffusion. After this procedure optimized annealing has been done. We also obtained conditions for decreasing of mismatch-induced stress value in this heterostructure. An analytical approach for analysis of heat and mass transport in multilayer structures has been introduced. The approach gives a possibility without crosslinking of solutionson interfaces between layers, take into account (i) spatial variation of parameters of considered processes; (ii) temporal variation of parameters of considered processes; (iii) nonlinearity of considered processes; (iv) mismatch-induced stress.</p>

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On Optimization of Manufacturing of Instrumentation Amplifier Input Bias Circuitry to Increase Density of Elements

2021 ◽  
Vol 7 (4) ◽  
Keyword(s):  
Integrated Circuits ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Instrumentation Amplifier ◽  
Radiation Defects ◽  
Amplifier Input ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework instrumentation amplifier input bias circuitry. Framework the approach, we consider the manufacturing of inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. Moreover, do pant and radiation defects should by annealed framework by optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Spatial and Temporal Variation of Parameters in Wadi Andlou, Tunisia-Pollution by Pulp Mill Discharge

2017 ◽  
Vol 45 (10) ◽  
pp. 1500471
Author(s):  
Abdelkader Ltifi ◽  
Neila Saidi ◽  
Mokded Rabhi ◽  
Kathleen S. Sealey ◽  
Amor Hafiane ◽  
...  
Keyword(s):  
Temporal Variation ◽  
Pulp Mill ◽  
Spatial And Temporal Variation ◽  
Variation Of Parameters

scholarly journals On Optimization of Manufacturing of a Injection-Locked Frequency Divider based on Heterostructures to Increase Density of Their Elements. Influence of Mismatch-Induced Stress and Porosity of Materials on Technological Process

2021 ◽  
Vol 23 (2) ◽  
pp. 111-163
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals On Prognosis of Manufacturing of an Enhanced Swing Differential Colpitts Oscillator Based on Heterostructures to Increase Density of Their Elements: Influence of Mismatch-Induced Stress

2020 ◽  
Vol 21 (1) ◽  
pp. 23-69
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density

2021 ◽  
Vol 1 (1) ◽  
pp. 10-31
Author(s):  
Evgeny L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

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