Power Fluidics—Amplifying Properties of Specially Designed Junctions

1977 ◽  
Vol 10 (4) ◽  
pp. 147-154 ◽  
Author(s):  
J. R. Tippetts
Keyword(s):  
Equivalent Circuit ◽  
Reverse Flow ◽  
Signal Power ◽  
Impedance Matrix ◽  
Power Gain ◽  
Large Signal ◽  
Circle Diagram ◽  
Flow Diverters

Specially designed 3-terminal elements called flow-junctions (FJs) and ‘reverse flow diverters' (RFDs) are shown to have useful amplifying properties which are often unrecognised. These are described by relating the devices to ideal network elements using an indefinite circle diagram. The FJ is useful between two transformer-like states and at the mid-point of this range its utility is described by its impedance matrix. A circuit using an RFD is shown to give a large-signal power gain which compares favourably with an equivalent circuit using a vortex device.

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

2011 ◽  
Vol 20 ◽  
pp. 27-36 ◽  
Author(s):  
Lei Sang ◽  
Yuehang Xu ◽  
Yongbo Chen ◽  
Yunnchuan Guo ◽  
Rui-Min Xu
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Large Signal ◽  
Gan Hemt

scholarly journals Modeling and Control of Double-Sided LCC Compensation Topology with Semi-Bridgeless Active Rectifier for Inductive Power Transfer System

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3921
Author(s):  
Cha ◽  
Kim ◽  
Park ◽  
Choi
Keyword(s):  
Steady State ◽  
Equivalent Circuit ◽  
Small Signal ◽  
Power Transfer ◽  
Large Signal ◽  
Signal Model ◽  
Worst Case ◽  
Inductive Power Transfer ◽  
Active Rectifier ◽  
Inductive Power

This paper proposes the modeling and design of a controller for an inductive power transfer (IPT) system with a semi-bridgeless active rectifier (S-BAR). This system consists of a double-sided Inductor-Capacitor-Capacitor (LCC) compensation network and an S-BAR, and maintains a constant output voltage under load variation through the operation of the rectifier switches. Accurate modeling is essential to design a controller with good performance. However, most of the researches on S-BAR have focused on the control scheme for the rectifier switches and steady-state analysis. Therefore, modeling based on the extended describing function is proposed for an accurate dynamic analysis of an IPT system with an S-BAR. Detailed mathematical analyses of the large-signal model, steady-state operating solution, and small-signal model are provided. Nonlinear large-signal equivalent circuit and linearized small-signal equivalent circuit are presented for intuitive understanding. In addition, worst case condition is selected under various load conditions and a controller design process is provided. To demonstrate the effectiveness of the proposed modeling, experimental results using a 100 W prototype are presented.

scholarly journals Broadband push-pull power amplifier design methodology based on the GaN component base for high-performance nonlinear junction detectors

2019 ◽  
Vol 30 ◽  
pp. 01011
Author(s):  
Vladimir Klokov ◽  
Nikolay Kargin ◽  
Alexander Garmash ◽  
Ekaterina Guzniaeva
Keyword(s):  
Theoretical Model ◽  
Output Power ◽  
Power Amplifier ◽  
High Performance ◽  
Design Methodology ◽  
Wide Band ◽  
Signal Power ◽  
Large Signal ◽  
Amplifier Design ◽  
Gain Characteristic

The paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.

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