Power Gain Analysis of SiGe HBTs under Large-signal Power Matching Conditions

Author(s):  
Ningyue Jiang ◽  
Zhenqiang Ma ◽  
Hao Jiang
1977 ◽  
Vol 10 (4) ◽  
pp. 147-154 ◽  
Author(s):  
J. R. Tippetts

Specially designed 3-terminal elements called flow-junctions (FJs) and ‘reverse flow diverters' (RFDs) are shown to have useful amplifying properties which are often unrecognised. These are described by relating the devices to ideal network elements using an indefinite circle diagram. The FJ is useful between two transformer-like states and at the mid-point of this range its utility is described by its impedance matrix. A circuit using an RFD is shown to give a large-signal power gain which compares favourably with an equivalent circuit using a vortex device.


2019 ◽  
Vol 30 ◽  
pp. 01011
Author(s):  
Vladimir Klokov ◽  
Nikolay Kargin ◽  
Alexander Garmash ◽  
Ekaterina Guzniaeva

The paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.


Sign in / Sign up

Export Citation Format

Share Document