Predicting Purchase Decisions with Different Conjoint Analysis Methods: A Monte Carlo Simulation

This paper reviews four major methods for tolerance analysis and compares them. The methods discussed are (1) 1D tolerance charts, (2) variational analysis based on Monte Carlo simulation, (3) vector loop (or kinematic) based analysis, and (4) ASU T-Maps© based tolerance analysis. Tolerance charts deal with tolerance analysis in one direction at a time and ignore possible contributions from the other directions. Manual charting is tedious and error-prone, hence attempts have been made for automation. Monte Carlo simulation based tolerance analysis is based on parametric solid modeling; its inherent drawback is that simulation results highly depend on the user-defined modeling scheme, and its inability to obey all Y14.5 rules. The vector loop method uses kinematic joints to model assembly constraints. It is also not fully consistent with Y14.5 standard. ASU T-Maps based tolerance analysis method can model geometric tolerances and their interaction in truly 3-dimensional context. It is completely consistent with Y14.5 standard but its use by designers may be quite challenging. T-Maps based tolerance analysis is still under development. Despite the shortcomings of each of these tolerance analysis methods, each may be used to provide reasonable results under certain circumstances. No guidelines exist for such a purpose. Through a comprehensive comparison of these methods, this paper will develop some guidelines for selecting the best method to use for a given tolerance accumulation problem.

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A comparison of several proposed reliability analysis methods combining Kriging and Monte Carlo Simulation (IEEE CGNCC)

2016 IEEE Chinese Guidance, Navigation and Control Conference (CGNCC) ◽

10.1109/cgncc.2016.7829033 ◽

2016 ◽

Author(s):

Zigan Zhao ◽

Zhengming Wang ◽

Xiaojun Duan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Reliability Analysis ◽

Analysis Methods

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Electron Scattering in Solids

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133618 ◽

1990 ◽

Vol 48 (2) ◽

pp. 4-5

Author(s):

Ryuichi Shimizu ◽

Ze-Jun Ding

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Angular Distribution ◽

Elastic Scattering ◽

Electron Scattering ◽

Cross Sections ◽

Expansion Method ◽

Electron Excitation ◽

Partial Wave Expansion ◽

Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134922 ◽

1990 ◽

Vol 48 (2) ◽

pp. 264-265

Author(s):

D. R. Liu ◽

S. S. Shinozaki ◽

R. J. Baird

Keyword(s):

Thin Film ◽

Thin Films ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Compound Semiconductors ◽

Energy Dispersive Analysis ◽

X Ray ◽

Metastable Alloys ◽

Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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