Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

2002 ◽  
Vol 716 ◽  
Author(s):  
Takaaki Amada ◽  
Nobuhide Maeda ◽  
Kentaro Shibahara
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Nitrogen Concentration ◽  
Implantation Dose ◽  
Control Technique ◽  
High Dose ◽  
Implantation Energy ◽  
20 Nm ◽  
Large Work ◽  
Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 851-854 ◽  
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Lattice Site ◽  
Lattice Distortion ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Location Analysis ◽  
High Dose ◽  
Site Location ◽  
Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

scholarly journals Silver Nanoparticles in Porous Germanium

2019 ◽  
Vol 3 (3) ◽  
Keyword(s):  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Average Diameter ◽  
Size Distribution Function ◽  
Thin Layers ◽  
Low Energy ◽  
High Dose ◽  
Near Surface ◽  
Backscattered Electrons ◽  
20 Nm

Recent experiments on fabrication of nanoporous Si and Ge layers with Ag nanoparticles by low-energy high-dose ion implantation are discussed. Ag+-ion implantation of single-crystal c-Si and c-Ge at low-energy (E = 30 keV) highdoses (D = 1.25·1015 - 1.5·1017 ion/cm2 ) and current density (J = 2-15 μA/cm2 ) was carried out for this purpose. The changes of Si and Ge surface morphology after ion implantation were studied by scanning electron and atom-force microscopy. The near surface area of samples was also analyzed by diffraction of the backscattered electrons and energydispersive X-ray microanalysis. Amorphization of near-surface layer was observed at the lowest implantation doses of c-Si. Ag nanoparticles were synthesized and uniformly distributed over the near Si surface when the threshold dose of 3.1·1015 ion/cm2 exceeded. At a dose of more than 1017 ion/cm2 , the formation of a surface nanoporous PSi structure was detected. Ag nanoparticle size distribution function became bimodal and the largest particles were localized along Si-pore walls. In the case of Ge substrates, as a result of the implantation on the c-Ge surface, a porous amorphous PGe layer of a spongy structure was formed consisting of a network of intersecting Ge nanowires with an average diameter of ~ 10-20 nm. At the ends of the nanowires, the synthesis of Ag nanoparticles was observed. It was found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Si and Ge surface. Thus, ion implantation is suggested to be used for the formation of nanoporous semiconductor thin layers for industry, which could be easily combined with the crystalline matrix for various applications.

Properties of Phase Change Materials Modified by Ion Implantation

2011 ◽  
Vol 1338 ◽  
Author(s):  
Simone Raoux ◽  
Guy M. Cohen ◽  
Marinus Hopstaken ◽  
Siegfried Maurer ◽  
Jean L. Jordan Sweet
Keyword(s):  
Ion Implantation ◽  
Phase Change ◽  
Crystallization Temperature ◽  
Phase Change Materials ◽  
High Dose ◽  
Carbon Ions ◽  
X Ray Diffraction ◽  
Additional Tool ◽  
20 Nm ◽  
Ion Species

ABSTRACTIon implantation of germanium and carbon ions into thin films of Ge2Sb2Te5 (GST) and GeTe was applied to modify the properties of these phase change materials. It was found that it is possible to amorphize crystalline GST and GeTe using ion implantation for optimized ion doses and energies which depend on the film thickness, ion species and capping layer. A relatively low minimum dose is required for complete amorphization as judged by the absence of diffraction peaks in x-ray diffraction (XRD) scans. It is 4–5×1013 cm−2 for germanium implantation into GST, and slightly higher (1014 cm−2) for germanium implantation into GeTe. The properties of the re-amorphized films depend on ion species, dose and energy. The re-crystallization temperature of re-amorphized GST by ion implantation is comparable or higher than as-deposited amorphous GST. Carbon implantation in particular leads to a large increase in the crystallization temperature Tx. A carbon dose of 1016 cm−2 implanted into 20 nm amorphous GST yielded a crystallization temperature of 300 ºC, much higher than the crystallization temperature of 160 ºC we recorded for as-deposited, amorphous GST. Similarly, high dose carbon implantation into amorphous GeTe leads to large increase in Tx. We recorded a shift in Tx from 195 ºC for as-deposited GeTe to 400 ºC for C-implanted GeTe. Crystalline GeTe re-amorphized by a low dose germanium ion implantation exhibits a re-crystallization temperature below Tx of as-deposited amorphous GeTe and Tx increased with the implanted Ge dose to a crystallization temperature above that of unimplanted GeTe. Ion implantation can be regarded an additional tool to create phase change materials with different and improved switching properties that cannot be achieved by conventional sputter deposition.

Titanium Silicidation and Secondary Defect Annihilation in ION Beam Processed Sige Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
F. La Via ◽  
S. Lombardo ◽  
V. Raineri ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Process Conditions ◽  
High Dose ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Secondary Defect ◽  
20 Nm

AbstractThe secondary defect annihilation by one- and two-step titanium silicidation in SiGe layers, formed by high dose Ge implantation, has been studied systematically as a function of the Ge fluence, implantation energy, silicide thickness, and silicide process conditions. In all cases the Ti thickness was kept below 20 nm, resulting in very thin Ti silicide layers typically less than 40 nm. The silicide phase was inspected by x-ray diffraction and transmission electron diffraction. Channelling Rutherford backscattering spectrometry and transmission electron microscopy were used to follow the end of range dislocation loop annihilation as a function of the silicide process conditions. The end of range loop annealing and the influence of silicidation is presented in this paper for Ge fluences above 3×1015 cm−2 and energies ranging from 70 keV to 140 keV. A model based on loop coarsening is presented which describes the observed loop annihilation behaviour.

A transmission electron microscope study of the complex annealing behaviour of amorphous layers due to ion implantation in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 384-385
Author(s):  
R. Drosd
Keyword(s):  
Electron Microscope ◽  
Ion Implantation ◽  
Crystal Orientation ◽  
Implantation Dose ◽  
High Dose ◽  
Annealing Behaviour ◽  
The Past ◽  
Transmission Electron ◽  
Transmission Electron Microscope Study ◽  
Very High

It is well known that very high dose ion implantation of Si results in an amorphous (α) layer. However, the annealing of this α layer with its complicated dependence on such variables as implant species, implantation dose and temperature, crystal orientation, and thermal history is not well understood. Many of the past studies have employed the ion chanelling technique to study the crystallization of the α layer. Although this technique gives useful information concerning the α layer thickness, it tells little about the type and density of defects present. Hence the electron microscope gives unique information of the detailed mechanism of crystallization of α Si layers.One of the most striking features of the annealing behaviour is its dependence on the crystal orientation. Previous studies indicate the (111) orientation crystallizes much more slowly than the (100), leaving behind a high density of stacking faults and twins.

Microstructure of Buried Thin Etch Stop Films Formed by Nitrogen Implantation into Silicon

1993 ◽  
Vol 308 ◽  
Author(s):  
A. Romano-Rodriguez ◽  
A. El-Hassani ◽  
A. Perez-Rodriguez ◽  
J. Samitier ◽  
J.R. Morante ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Surface Region ◽  
Implantation Dose ◽  
Structural Defects ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Etch Stop ◽  
Crystalline Nature ◽  
Buried Layers ◽  
Nitrogen Ion

ABSTRACTThe microstructure of buried layers obtained by medium to high dose nitrogen ion implantation in silicon for etch-stop applications is investigated as a function of the implantation conditions (dose and temperature). Samples are analyzed by TEM, SIMS, FTIR and XPS measurements. The correlation between the data from the different techniques allows to characterize the different layers in the structure, determining the phases induced during the process, the crystalline nature of the layers and the presence of structural defects. The obtained data show the gettering of nitrogen after annealing in both a buried layer around the implantation peak and in the surface region. The nitrogen concentration in these regions and the formation and nature of silicon nitride precipitates show strong dependences with the implantation dose and temperature.

scholarly journals Effect of Low-Energy Nitrogen Ion Implantation on Friction and Wear Properties of Ion-Plated TiC Coating

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 775
Author(s):  
Zhongyu Dou ◽  
Yinglu Guo ◽  
Faguang Zhang ◽  
Dianxi Zhang
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Implantation Dose ◽  
Low Energy ◽  
Wear Properties ◽  
Implantation Energy ◽  
Nitrogen Ion Implantation ◽  
Friction Performance ◽  
Nitrogen Ion ◽  
Tribological Analysis

To further improve the performance of the coated tools, we investigated the effects of low-energy nitrogen ion implantation on surface structure and wear resistance for TiC coatings deposited by ion plating. In this experiment, an implantation energy of 40 keV and a dose of 2 × 1017 to 1 × 1018 (ions/cm2) were used to implant N ions into the TiC coatings. The results indicate that the surface roughness of the coating increases first and then decreases with the increase of ion implantation dose. After ion implantation, the surface of the coating will soften and reduce the hardness, and the production of TiN phase will gradually increase the hardness. Nitrogen ion implantation can reduce the friction coefficient of the TiC coating and improve the friction performance. In terms of wear resistance, the coating with an implant dose of 1×1018 ions/cm2 has the greatest improvement in wear resistance. Tribological analysis shows that the improvement in the performance of TiC coatings implanted with N ions is mainly due to the effect of the lubricating implanted layer. The implanted layer mainly exists in the form of amorphous TiC, TiN phase, and sp2C–C phase.

Research on ion implantation in MEMS device fabrication by theory, simulation and experiments

2018 ◽  
Vol 32 (14) ◽  
pp. 1850170 ◽  
Author(s):  
Minyu Bai ◽  
Yulong Zhao ◽  
Binbin Jiao ◽  
Lingjian Zhu ◽  
Guodong Zhang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Microelectromechanical Systems ◽  
Elementary Theory ◽  
Implantation Dose ◽  
Device Fabrication ◽  
Implantation Energy ◽  
Annealing Conditions ◽  
Key Factor ◽  
Lattice Damage ◽  
Mems Device

Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document