Optical Activation of Ion Implanted Rare-Earths
Keyword(s):
ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).
1934 ◽
Vol 146
(856)
◽
pp. 46-55
◽
Keyword(s):
2017 ◽
1967 ◽
Vol 22
(4)
◽
pp. 551-555
◽