scholarly journals Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Guangjian Zhu ◽  
Tao Liu ◽  
Zhenyang Zhong ◽  
Xinju Yang ◽  
Liming Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Wet Etching ◽  
High Quality ◽  
Selective Epitaxial Growth

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

2010 ◽  
Vol 518 (9) ◽  
pp. 2538-2541 ◽  
Author(s):  
G. Wang ◽  
R. Loo ◽  
S. Takeuchi ◽  
L. Souriau ◽  
J.C. Lin ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Quality ◽  
Selective Epitaxial Growth

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth

Selective epitaxial growth of silicon in pancake reactors

1988 ◽  
Vol 43 (8) ◽  
pp. 2031-2036 ◽  
Author(s):  
M. Kastelic ◽  
I. Oh ◽  
C.G. Takoudis ◽  
J.A. Friedrich ◽  
G.W. Neudeck
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth
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