scholarly journals Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles *

2020 ◽  
pp. 59-68
Author(s):  
V. Ryzhii ◽  
M. Ryzhii ◽  
T. Otsuji
Keyword(s):  
Optically Pumped ◽  
Electron Hole ◽  
Tunneling Recombination

scholarly journals Tunneling recombination in optically pumped graphene with electron-hole puddles

2011 ◽  
Vol 99 (17) ◽  
pp. 173504 ◽  
Author(s):  
V. Ryzhii ◽  
M. Ryzhii ◽  
T. Otsuji
Keyword(s):  
Optically Pumped ◽  
Electron Hole ◽  
Tunneling Recombination

Tuning of 2-D Silicon Photonic Crystals

2002 ◽  
Vol 722 ◽  
Author(s):  
H. M. van Driel ◽  
S.W. Leonard ◽  
J. Schilling ◽  
R.B. Wehrspohn
Keyword(s):  
Band Gap ◽  
High Frequency ◽  
Optical Band Gap ◽  
Photonic Band Gap ◽  
Macroporous Silicon ◽  
Optically Pumped ◽  
Electron Hole ◽  
Silicon Photonic ◽  
Induced Changes ◽  
Photonic Band

AbstractWe demonstrate two ways in which the optical band-gap of a 2-D macroporous silicon photonic crystal can be tuned. In the first method the temperature dependence of the refractive index of an infiltrated nematic liquid crystal is used to tune the high frequency edge of the photonic band gap by up to 70 nm as the temperature is increased from 35 to 59°C. In a second technique we have optically pumped the silicon backbone using 150 fs, 800 nm pulses, injecting high density electron hole pairs. Through the induced changes to the dielectric constant via the Drude contribution we have observed shifts up to 30 nm of the high frequency edge of a band-gap.

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

Origins of Parasitic Emissions from 353 nm AlGaN-based UV LEDs over SiC Substrates

2005 ◽  
Vol 892 ◽  
Author(s):  
Ji-Soo Park ◽  
Daryl W Fothergill ◽  
Patrick Wellenius ◽  
Seann M. Bishop ◽  
John F. Muth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optically Pumped ◽  
Electron Hole ◽  
Capping Layer ◽  
Uv Emission ◽  
Broad Emission ◽  
Shoulder Peak ◽  
P Type ◽  
Uv Leds ◽  
Hole Recombination

AbstractThe effects of p-GaN capping layers and p-type carrier-blocking layers on the occurrence of parasitic emissions from 353 nm AlGaN-based LEDs have been investigated. LEDs without a p-type Al0.25Ga0.75N carrier-blocking layer showed a shoulder peak at ∼370 nm due to electron overflow into the p-Al0.10Ga0.90N cladding layer and subsequent electron-hole recombination in the acceptor levels. Broad emission between 380 and 450 nm from LEDs having a p-GaN capping layer was caused by 420 nm luminescence from the p-GaN capping layer, which was optically pumped by 353 nm UV emission from the quantum wells. Broad, defect-related luminescence at ∼520 nm was emitted from the AlGaN layers within the quantum wells.

The Electron-Hole Interaction and Linear Optical Constants

1999 ◽  
Vol 579 ◽  
Author(s):  
L. X. Benedict
Keyword(s):  
Ab Initio ◽  
Optical Constants ◽  
Time Dependent ◽  
Computational Scheme ◽  
Optically Pumped ◽  
Electron Hole ◽  
Linear Optical ◽  
Hole Interaction

ABSTRACTWe present an ab initio computational scheme to calculate ε(ω) including the screened electron-hole interaction. Results are presented for GaP and optically-pumped GaAs. We also discuss a time-dependent formulation which has some conceptual advantages.

Raman scattering from optically pumped electron-hole plasma in insulating GaAs

1977 ◽  
Vol 22 (2) ◽  
pp. 97-102 ◽  
Author(s):  
A.R. Vasconcellos ◽  
R.S. Turtelli ◽  
A.R.B. de Castro
Keyword(s):  
Raman Scattering ◽  
Optically Pumped ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma
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