In-well and cross-well carrier transport in quantum wells

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

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Picosecond Imaging of Photoexcited-Carrier Transport in GaAs/AlGaAs Multiple Quantum Wells

Springer Series in Chemical Physics - Ultrafast Phenomena VII ◽

10.1007/978-3-642-84269-6_79 ◽

1990 ◽

pp. 262-264 ◽

Cited By ~ 3

Author(s):

D. R. Wake ◽

H. W. Yoon ◽

J. S. Preston ◽

H. Morkoç ◽

J. P. Wolfe

Keyword(s):

Quantum Wells ◽

Carrier Transport ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Photoexcited Carrier

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Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Chinese Physics B ◽

10.1088/1674-1056/25/11/117803 ◽

2016 ◽

Vol 25 (11) ◽

pp. 117803 ◽

Cited By ~ 1

Author(s):

Haiyan Wu ◽

Ziguang Ma ◽

Yang Jiang ◽

Lu Wang ◽

Haojun Yang ◽

...

Keyword(s):

Quantum Wells ◽

Direct Observation ◽

Transport Process ◽

Carrier Transport ◽

Pn Junction ◽

Ingan Quantum Wells

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THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

International Journal of Modern Physics B ◽

10.1142/s021797920503222x ◽

2005 ◽

Vol 19 (21) ◽

pp. 3353-3377 ◽

Cited By ~ 1

Author(s):

V. A. VETTCHINKINA ◽

A. BLOM ◽

M. A. ODNOBLYUDOV

Keyword(s):

Monte Carlo ◽

Quantum Wells ◽

Electric Fields ◽

Carrier Transport ◽

Impurity Scattering ◽

Resonant Scattering ◽

Interface Roughness ◽

The Monte Carlo Method ◽

Analytic Expressions ◽

Different Temperatures

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

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