THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

2005 ◽  
Vol 19 (21) ◽  
pp. 3353-3377 ◽  
Author(s):  
V. A. VETTCHINKINA ◽  
A. BLOM ◽  
M. A. ODNOBLYUDOV
Keyword(s):  
Monte Carlo ◽  
Quantum Wells ◽  
Electric Fields ◽  
Carrier Transport ◽  
Impurity Scattering ◽  
Resonant Scattering ◽  
Interface Roughness ◽  
The Monte Carlo Method ◽  
Analytic Expressions ◽  
Different Temperatures

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method

1996 ◽  
Vol 79 (2) ◽  
pp. 911 ◽  
Author(s):  
Shinya Yamakawa ◽  
Hiroaki Ueno ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Kazuo Miyatsuji ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Electron Mobility ◽  
Interface Roughness ◽  
The Monte Carlo Method

scholarly journals Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Safi Altunöz ◽  
Hüseyin Çelik ◽  
Mehmet Cankurtaran
Keyword(s):  
Quantum Wells ◽  
Applied Voltage ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Vertical Transport ◽  
Interface Roughness ◽  
Polar Optical Phonon ◽  
Optical Phonon Scattering ◽  
Interface Roughness Scattering ◽  
The Difference

AbstractThe mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−y AlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain N w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N w=0 and 2, whereas ionized impurity scattering is dominant in the samples with N w=4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N w=4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Structural Parameters ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering ◽  
Different Temperatures ◽  
Scattering Rates

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.

scholarly journals Transport properties and seebeck coefficient of the quasi-twodimensional electron gas in ALP quantum wells

2015 ◽  
Vol 18 (3) ◽  
pp. 85-92
Author(s):  
Tai Van Vo ◽  
Khanh Quoc Nguyen
Keyword(s):  
Quantum Well ◽  
Seebeck Coefficient ◽  
Quantum Wells ◽  
Local Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Parallel Magnetic Field ◽  
Local Field Correction ◽  
Quantum Well Width

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.

Monte Carlo Computations on Molten Caesium Bromide

1975 ◽  
Vol 30 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Chiara Margheritis ◽  
Cesare Sinistri
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Thermodynamic Properties ◽  
Total Energy ◽  
Distribution Functions ◽  
Radial Distribution Functions ◽  
Pair Potentials ◽  
The Monte Carlo Method ◽  
Different Temperatures ◽  
Increasing Temperature

Abstract Molten CsBr was computer simulated tat 1 atm and four different temperatures using the Monte Carlo method. Structural and thermodynamic properties of the melt were obtained on the basis of pair potentials. In particular, radial distribution functions, volume, and energy with its coulomb, dipole-dipole, and repulsive components were determined. Separately, the polarization energy was also evaluated: this quantity increases with increasing temperature and ranges between 2 and 4% of the total energy.

Monte Carlo Simulation of Thermophysical Properties for Al-Ce Liquid Alloys

2010 ◽  
Vol 654-656 ◽  
pp. 1404-1407 ◽  
Author(s):  
Wen Jing Yao ◽  
Nan Wang
Keyword(s):  
Monte Carlo ◽  
Diffusion Coefficient ◽  
Thermophysical Properties ◽  
Alloy System ◽  
Simulation Method ◽  
The Monte Carlo Method ◽  
Different Temperatures ◽  
Binary Alloy System ◽  
Eam Potential ◽  
And Diffusion

The Monte Carlo method with EAM potential is applied to simulate the liquid Al-Ce binary alloy system and the thermophysical properties including surface tension (), viscosity () and diffusion coefficient (D) of liquid Al-8at%Ce alloy are determined. The simulated  values decrease with temperature. Based on the relationship between ,  and D, the various viscosity and diffusion coefficient of liquid Al-Ce alloys under different temperatures were determined. The comparison of the simulated results with some experimental measurements is performed and discussed, indicating that the simulation method and EAM parameters in simulation are acceptable. The dependence of viscosity and diffusion coefficient of liquid Al-Ce alloys on temperature is established to be helpful in further investigation of amorphrization ability of Al-Ce alloys.

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

2010 ◽  
Vol 19 (5) ◽  
pp. 057304 ◽  
Author(s):  
Du Gang ◽  
Liu Xiao-Yan ◽  
Xia Zhi-Liang ◽  
Yang Jing-Feng ◽  
Han Ru-Qi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Carrier Transport ◽  
Interface Roughness

Monte Carlo Calculations on Molten Silver Bromide

1978 ◽  
Vol 33 (1) ◽  
pp. 38-41
Author(s):  
Chiara Margheritis ◽  
Cesare Sinistri
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Silver Bromide ◽  
Crystal Data ◽  
Monte Carlo Calculations ◽  
Pair Potentials ◽  
The Monte Carlo Method ◽  
Repulsive Potentials ◽  
Different Temperatures ◽  
Experimental Values

Using crystal data in the range 20-300 °C, the AgBr interionic pair potentials were calculated. By means of these potentials the melt was computer simulated with the Monte Carlo method at three different temperatures (694, 1000 and 1778 K). The system thus obtained is relaxed and it behaves as if an important cohesive force, like the homopolar one, would be lacking.It was empirically proved that if the interionic repulsive potentials are reduced by about 40% the experimental values of the density and of the internal energy are reproduced.

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